BUK456-60A Philips Semiconductors, BUK456-60A Datasheet - Page 4

• Manufacturer Part Number: BUK456-60A
• Description: PowerMOS transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
April 1993
PowerMOS transistor
Fig.9. Normalised drain-source on-state resistance.
a = R
I
D
100
Fig.8. Typical transconductance, T
2.0
1.5
1.0
0.5
20
10
80
60
40
20
= f(V
0
0
0
-60
Fig.7. Typical transfer characteristics.
0
DS(ON)
gfs / S
a
0
ID / A
GS
g
) ; conditions: V
fs
/R
-20
= f(I
DS(ON)25 ˚C
20
2
D
); conditions: V
20
Tj / C =
40
= f(T
4
VGS / V
ID / A
Tj / C
60
DS
j
); I
Normalised RDS(ON) = f(Tj)
= 25 V; parameter T
60
D
6
= 29 A; V
100
DS
= 25 V
25
BUK456-50A
80
BUK456-50A
8
140
j
150
= 25 ˚C .
GS
= 10 V
100
180
10
j
4
V
Fig.12. Typical capacitances, C
10000
C = f(V
4
3
2
1
0
GS(TO)
I
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
1000
D
100
-60
10
VGS(TO) / V
= f(V
Fig.11. Sub-threshold drain current.
0
C / pF
0
Fig.10. Gate threshold voltage.
ID / A
= f(T
GS)
DS
-20
); conditions: V
; conditions: T
j
); conditions: I
1
20
2 %
max.
typ.
min.
20
Tj / C
VDS / V
SUB-THRESHOLD CONDUCTION
60
2
VGS / V
j
GS
= 25 ˚C; V
D
= 1 mA; V
= 0 V; f = 1 MHz
BUK456-60A/B
typ
100
Product Specification
3
iss
, C
140
98 %
40
DS
BUK4y6-50
DS
oss
= V
4
Ciss
Coss
Crss
, C
= V
Rev 1.100
180
GS
rss
GS
.