FDC602 Fairchild Semiconductor, FDC602 Datasheet - Page 2

• Manufacturer Part Number: FDC602
• Description: P-Channel 2.5V Specified PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Notes:
1. R
2. Pulse Test: Pulse Width =300 s, Duty Cycle =2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
Drain–Source Diode Characteristics and Maximum Ratings
I
V
a. 78°C/W when mounted on a 1in
b. 156°C/W when mounted on a minimum pad.
DSS
GSSF
GSSR
S
GS(th)
SD
DS(on)
JA
DSS
pins. R
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain
JC
is guaranteed by design while R
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Static Drain–Source
On–Resistance
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Parameter
2
pad of 2oz copper on FR-4 board.
(Note 2)
CA
is determined by the user's board design.
T
V
V
V
V
V
V
V
V
A
= 25°C unless otherwise noted
GS
DS
GS
GS
DS
GS
GS
GS
= –10 V,
= V
= 0 V, I
= 12 V,
= –12 V
= –4.5 V,
= –2.5 V,
= 0 V,
Test Conditions
GS
, I
D
D
I
= –250 A
= –250 A
S
= –1.3 A
V
V
V
I
I
GS
DS
D
D
DS
= –5.5 A
= –4.4 A
= 0 V
= 0 V
= 0 V
(Note 2)
Min
–0.6
–12
Typ Max Units
0.033
0.052
–100
–1.5
–1.3
–1.2
100
–1
FDC602P Rev A
nA
nA
V
V
A
V
A