EC103D1-01 NXP Semiconductors, EC103D1-01 Datasheet - Page 5

• Manufacturer Part Number: EC103D1-01
• Description: Ec103d1 Sensitive Gate Thyristor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
8. Characteristics
Table 5:
T
9397 750 08574
Product data
Symbol
Static characteristics
I
I
I
V
V
I
I
Dynamic characteristics
dV
t
t
GT
L
H
D
R
gt
q
j
T
GT
= 25 C unless otherwise specified.
D
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
reverse current
rate of rise of off-state
voltage
gate controlled turn-on
time
commutated turn-off time
Conditions
V
circuit
V
I
I
V
T
V
exponential waveform; R
I
I
V
I
dI
R
T
T
TM
G
TM
j
D
D
D
D
D
GK
TM
= 1.0 A
= 10 mA; gate open circuit
V
V
= 125 C; R
= 10 mA; dI
= 12 V; I
= 12 V; I
= V
= 0.67 V
= 0.67 V
D
D
= 2.0 A; V
= 1.6 A; V
/dt = 30 A / s; dV
= 1 k
= 12 V
= V
DRM (max)
Rev. 01 — 1 November 2001
DRM (max)
T
GT
DRM(max)
DRM(max)
= 0.1 A; gate open
D
R
GK
G
= 0.5 mA; R
; V
/dt = 0.1 A / s
= V
= 35 V;
= 1 k
; T
R
DRM(max)
= V
; T
; T
j
= 125 C
D
case
j
/dt = 2 V/ s;
RRM (max)
= 125 C;
GK
GK
= 125 C;
;
= 1 k
= 1 k
;
Min
-
-
-
-
-
0.2
-
-
-
-
-
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Typ
3
2
2
1.2
0.5
0.3
50
50
25
2
100
Sensitive gate thyristor
EC103D1
Max
12
6
5
1.35
0.8
-
100
100
-
-
-
Unit
mA
mA
V
V
V
V/ s
5 of 11
A
A
A
s
s