EC103D1-01 NXP Semiconductors, EC103D1-01 Datasheet - Page 2

• Manufacturer Part Number: EC103D1-01
• Description: Ec103d1 Sensitive Gate Thyristor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 08574
Product data
Symbol Parameter
V
V
I
I
Symbol Parameter
V
V
I
I
I
I
dI
I
V
V
P
P
T
T
T(RMS)
TSM
T(AV)
T(RMS)
TSM
2
GM
DRM
RRM
DRM
RRM
GM
RGM
GM
G(AV)
stg
j
t
T
/dt
repetitive peak off-state voltage
repetitive peak reverse voltage
on-state current (RMS value)
non-repetitive peak on-state current
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
on-state current (RMS value)
non-repetitive peak on-state current
I
rate of rise on-state current
peak gate current
peak gate voltage
peak reverse gate voltage
peak gate power
average gate power
storage temperature
operating junction temperature
Quick reference data
Limiting values
2
t for fusing
Rev. 01 — 1 November 2001
Conditions
25 C
Conditions
25 C
half sine wave; T
all conduction angles
half sine wave; T
surge
t
I
dI
over any 20 ms period
TM
G
t = 10 ms
t = 8.3 ms
/dt = 100 mA/ s
10 ms
= 2.0 A; I
T
T
j
j
125 C
125 C
G
= 10 mA;
lead
j
= 25 C prior to
83 C
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Typ
-
-
-
-
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40
Sensitive gate thyristor
EC103D1
Max
400
400
0.8
8.0
Max
400
400
0.5
0.8
8.0
9.0
0.32
50
1.0
5.0
5.0
2.0
0.1
+150
+125
Unit
V
V
A
A
Unit
V
V
A
A
A
A
A
A/ s
V
V
W
W
C
C
2
s
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