EC103D1-01 NXP Semiconductors, EC103D1-01 Datasheet - Page 3

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EC103D1-01

Manufacturer Part Number
EC103D1-01
Description
Ec103d1 Sensitive Gate Thyristor
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
9397 750 08574
Product data
Fig 1. Maximum on-state dissipation as a function of
Fig 3. Maximum permissible on-state current (RMS
I T(RMS)
= conduction angle
(A)
P tot
(W)
average on-state current; typical values.
value) as a function of lead temperature; typical
values.
1.0
0.8
0.6
0.4
0.2
0.4
0.2
0.6
0
0
-50
0
0
= 30
0.2
= 60
50
= 90
= 120
0.4
100
I T(AV) (A)
T lead ( C)
= 180
003aaa116
003aaa111
Rev. 01 — 1 November 2001
150
0.6
Fig 2. Maximum permissible non-repetitive peak
Fig 4. Maximum permissible repetitive on-state
I T(RMS)
I TSM
n = number of cycles at f = 50 Hz
f = 50 Hz; T
(A)
(A)
1.5
10
on-state current as a function of number of
cycles for sinusoidal currents; typical values.
2.0
1.0
current (RMS value) as a function of surge
duration for sinusoidal currents; typical values.
0.5
8
2
6
4
0
0
1
10 -2
lead
83 C.
10
10 -1
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Sensitive gate thyristor
10 2
1
EC103D1
t surge (s)
003aaa110
003aaa117
n
10 3
10
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