DSP56371D Motorola Inc, DSP56371D Datasheet - Page 3
![no-image](/images/no-image-200.jpg)
DSP56371D
Manufacturer Part Number
DSP56371D
Description
high density CMOS device
Manufacturer
Motorola Inc
Datasheet
1.DSP56371D.pdf
(102 pages)
- Current page: 3 of 102
- Download datasheet (2Mb)
To prevent a high current condition upon power up, the IOVDD must be applied ahead of the CORE VDD
as shown below if the external Schottcky is not used.
4.0
MOTOROLA
Natural Convection, Junction-to-ambient thermal
resistance
Junction-to-case thermal resistance
Note:
CORE VDD
IO VDD
1.
2.
3.
Thermal Characteristics
1,2
Junction temperature is a function of die size, on-chip power dissipation, package thermal
resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation
of other components on the board, and board thermal resistance.
Per SEMI G38-87 and JEDEC JESD51-2 with the single layer board horizontal.
Thermal resistance between the die and the case top surface as measured by the cold plate
method (MIL SPEC-883 Method 1012.1).
Characteristic
Freescale Semiconductor, Inc.
For More Information On This Product,
Table 2 Thermal Characteristics
3
DSP56371 Technical Data
Go to: www.freescale.com
R
R
Symbol
θJC
θJA
or θ
or θ
JA
JC
TQFP Value
18.25
39
Thermal Characteristics
°
°
Unit
C/W
C/W
3
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