MPSA65-D75Z Fairchild Semiconductor, MPSA65-D75Z Datasheet
MPSA65-D75Z
Manufacturer Part Number
MPSA65-D75Z
Description
Mpsa65/mmbta65/pzta65 Pnp Darlington Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.MPSA65-D75Z.pdf
(3 pages)
1997 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
CES
CBO
EBO
J
Thermal Characteristics
Absolute Maximum Ratings*
*
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
JC
JA
*
**
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
See MPSA64 for characteristics.
, T
C
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
stg
B
E
MPSA65
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Derate above 25 C
TO-92
Characteristic
Parameter
TA = 25°C unless otherwise noted
MMBTA65
SOT-23
Mark: 2W
C
TA = 25°C unless otherwise noted
MPSA65
B
83.3
625
200
5.0
E
*MMBTA65
Max
357
350
2.8
2
.
-55 to +150
Value
1.2
30
30
10
SOT-223
PZTA65
C
**PZTA65
1,000
125
8.0
B
Units
C
V
V
V
A
C
mW/ C
Units
mW
C/W
C/W
E
A65, Rev A
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MPSA65-D75Z Summary of contents
Page 1
... Device mounted on FR-4 PCB 1.5 mm; mounting pad for the collector lead min 1997 Fairchild Semiconductor Corporation MMBTA65 SOT-23 Mark 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted MPSA65 625 5.0 83.3 200 PZTA65 SOT-223 Value ...
Page 2
Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Em itter Breakdown (BR)CES Voltage I Collector-Cutoff Current CBO I Em itter-Cutoff Current EBO ON CHARACTERISTICS Current Gain FE Collector-Emitter Saturation Voltage V sat CE( ) Base-Emitter On Voltage V on ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...