BCV26-NL Fairchild Semiconductor, BCV26-NL Datasheet - Page 2

• Manufacturer Part Number: BCV26-NL
• Description: Bcv26 Pnp Darlington Transistor
• Manufacturer: Fairchild Semiconductor

h
V
V
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
V
V
V
I
I
f
C
FE
Symbol
CE(
BE(
CBO
EBO
T
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
(BR)CEO
(BR)CBO
(BR)EBO
C
Electrical Characteristics
Typical Characteristics
sat
sat
)
)
50
40
30
20
10
0
0.01
Typical Pulsed Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
Emitter-Cutoff Current
Current Gain - Bandwidth Product
Collector Capacitance
CE
= 5V
- 40 °C
vs Collector Current
I - COLLECTOR CURRENT (A)
C
25 °C
Parameter
125 °C
0.1
TA = 25°C unless otherwise noted
I
I
I
I
I
C
C
C
C
C
I
I
I
V
V
I
f = 100 MHz
V
C
C
E
C
1
= 1.0 mA, V
= 10 mA, V
= 100 mA, V
= 100 mA, I
= 100 mA, I
CB
EB
CB
= 10 mA, I
= 10 A, I
= 100 nA, I
= 30 mA, V
= 30 V, I
= 10 V, I
= 30 V, I
Test Conditions
E
C
CE
B
E
E
B
B
1.6
1.2
0.8
0.4
C
CE
CE
= 0
CE
= 0
= 0
= 0
= 0, f = 1.0 MHz
0.001
= 0.1 mA
= 0.1 mA
0
= 0
= 5.0 V
= 5.0 V
= 5.0 V,
= 5.0 V
Voltage vs Collector Current
Collector-Emitter Saturation
= 1000
- 40 °C
PNP Darlington Transistor
I - COLLECTOR CURRENT (A)
C
0.01
10,000
20,000
4,000
Min
25 °C
30
40
10
Typ
220
3.5
0.1
125 °C
Max Units
0.1
0.1
1.0
1.5
(continued)
MHz
pF
V
V
V
V
V
1
A
A