EGF1A-EGF1D Fairchild Semiconductor, EGF1A-EGF1D Datasheet - Page 2

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EGF1A-EGF1D

Manufacturer Part Number
EGF1A-EGF1D
Description
1.0 Ampere High Efficiency Glass Passivated Rectifier
Manufacturer
Fairchild Semiconductor
Datasheet
Typical Characteristics
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
1.6
1.4
1.2
0.8
0.6
0.4
0.2
40
30
20
10
1
0
0
Forward Current Derating Curve
0
1
50
N O N I N D U C T I V E
ON 0.2 x 0.2"
(5.0 x 5.0 mm)
COPPER PAD AREAS
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
50
N O N I N D U C T I V E
Non-Repetitive Surge Current
5 0 V
(approx)
25
2
Reverse Recovery Time Characterstic and Test Circuit Diagram
NUMBER OF CYCLES AT 60Hz
LEAD TEMPERATURE ( C)
50
D U T
5
75
50
N O N I N D U C T I V E
10
100
O S C I L L O S C O P E
(Note 1)
60
50
40
30
20
10
20
0
0.1
125
º
Typical Junction Capacitance
150
Pulse
Generator
(Note 2)
50
0.5 1
REVERSE VOLTAGE (V)
(-)
(+)
175
100
2
5
10 20
0.01
1000
100
50 100
0.1
100
10
0.1
-0.25A
10
1
+0.5A
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
-1.0A
0.2
1
0
0
Forward Characteristics
T = 25 C
Pulse Width = 300 S
2% Duty Cycle
T = 25 C
Reverse Characteristics
J
A
0.4
20
500
º
º
FORWARD VOLTAGE (V)
0.6
1.0cm
40
T = 100 C
T = 25 C
T = 25 C
A
trr
J
A
0.8
60
º
º
º
SET TIME BASE FOR
80
1
5/ 10 ns/ cm
1.2
100
1.4
120
EGF1A-EGF1D, Rev. B
1.6
140

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