SI4925 Fairchild Semiconductor, SI4925 Datasheet - Page 4

• Manufacturer Part Number: SI4925
• Description: Dual P-Channel/ Logic Level/ PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
10
0.05
0.01
8
6
4
2
0
0.5
0
30
10
Figure 7. Gate Charge Characteristics.
3
Figure 9. Maximum Safe Operating Area.
0.1
I = -6A
D
0.005
0.002
0.001
0.05
0.02
0.01
0.5
0.2
0.1
0.0001
SINGLE PULSE
R
1
JA
V
T = 25°C
GS
A
6
0.3
=135°C/W
= -10V
- V
D = 0.5
DS
Q
g
, DRAIN-SOURCE VOLTAGE (V)
0.2
, GATE CHARGE (nC)
0.1
12
0.05
1
0.001
0.02
0.01
Figure 11. Transient Thermal Response Curve.
2
Single Pulse
V
18
DS
= -5V
5
-15V
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
0.01
10
(continued)
24
-10V
30
30
50
0.1
t , TIME (sec)
1
30
25
20
15
10
3000
2000
1000
5
0
0.01
500
200
100
0.1
Figure 10. Single Pulse Maximum Power
Figure 8. Capacitance Characteristics.
f = 1 MHz
V
1
GS
0.2
= 0 V
0.1
- V
DS
0.5
SINGLE PULSE TIME (SEC)
, DRAIN TO SOURCE VOLTAGE (V)
Dissipation.
P(pk)
0.5
T - T
R
10
Duty Cycle, D = t /t
J
1
R
JA
t
1
A
JA
(t) = r(t) * R
t
= P * R
2
= 135°C/W
2
JA
1
10
(t)
2
SINGLE PULSE
R
5
JA
100
JA
C oss
T = 25°C
C rss
C iss
A
=135°C/W
10
50 100
300
Si4925DY Rev.A
20 30
300