SI4925 Fairchild Semiconductor, SI4925 Datasheet - Page 3

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SI4925

Manufacturer Part Number
SI4925
Description
Dual P-Channel/ Logic Level/ PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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Typical Electrical Characteristics
30
24
18
12
6
0
Figure 1. On-Region Characteristics.
Figure 5. Transfer Characteristics.
1.5
Figure 3. On-Resistance Variation with
1.6
1.4
1.2
0.8
0.6
30
24
18
12
1
V
6
0
-50
DS
0
V
-6.0V
= -5.0V
GS
V
I = -6A
D
GS
= -10V
-25
2
= -10V
- V
Temperature.
GS
1
T , JUNCTION TEMPERATURE (° C)
- V
0
J
, GATE TO SOURCE VOLTAGE (V)
2.5
-4.5V
DS
, DRAIN-SOURCE VOLTAGE (V)
25
2
3
50
-3.5V
T = -55° C
J
75
3
3.5
25° C
-3.0V
100
125° C
4
4
125
150
4.5
5
0.08
0.06
0.04
0.02
0.001
0.01
0.1
2.5
1.5
0.5
0.1
30
10
0
2
1
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
1
2
0
0
Figure 6. Body Diode Forward Voltage
V
V
GS
GS
= -3.5V
= 0V
- V
0.3
SD
6
- V
4
GS
, BODY DIODE FORWARD VOLTAGE (V)
Variation with Source Current
Gate-to-Source Voltage.
T = 125° C
and Temperature.
Dain Current and Gate Voltage.
J
, GATE TO SOURCE VOLTAGE (V)
-4.0 V
- I
D
, DRAIN CURRENT (A)
12
0.6
25° C
-4.5 V
6
-55° C
-5.5 V
18
0.9
-7.0 V
8
T = 125°C
24
1.2
I = -3A
A
D
Si4925DY Rev.A
-10V
25° C
1.5
30
10

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