SGH80N60 Fairchild Semiconductor, SGH80N60 Datasheet - Page 2

• Manufacturer Part Number: SGH80N60
• Description: Ultra-Fast IGBT
• Manufacturer: Fairchild Semiconductor

©2002 Fairchild Semiconductor Corporation
Electrical Characteristics of the IGBT
Off Characteristics
BV
I
I
On Characteristics
V
V
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Q
Q
Q
L
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
Symbol
e
B
T
GE(th)
CE(sat)
on
off
ts
on
off
ts
ies
oes
res
g
ge
gc
J
VCES
CES
/
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
Parameter
V
V
V
V
V
f = 1MHz
V
R
Inductive Load, T
V
R
Inductive Load, T
V
V
Measured 5mm from PKG
I
I
I
C
C
C
GE
GE
CE
GE
CE
CC
CC
CE
GE
G
G
= 40A
= 80A
= 40mA, V
= 5 , V
= 5 , V
= V
= 30V
= 300 V, I
= 0V, I
= 0V, I
= V
= 300 V, I
= 300 V, I
= 15V
T
Test Conditions
C
= 25 C unless otherwise noted
CES
GES
,
,
,
C
C
V
GE
GE
, V
, V
V
V
GE
= 250uA
= 1mA
CE
C
GE
GE
C
= 15V,
C
= 15V,
GE
CE
= 0V,
= 40A,
= 40A,
= 40A,
= V
C
C
= 15V
= 15V
= 0V
= 0V
= 25 C
= 125 C
GE
Min.
600
3.5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
2790
1580
1160
Typ.
350
100
570
590
150
160
630
940
175
0.6
4.5
2.1
2.6
23
50
90
50
30
55
25
60
14
--
--
--
± 100
Max.
1500
2000
250
130
150
200
250
250
6.5
2.6
40
90
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
SGH80N60UF Rev. A1
Units
V/ C
nC
nC
nC
nH
uA
nA
pF
pF
pF
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
V
V
V
V