MT58L64V36F Micron Semiconductor, MT58L64V36F Datasheet - Page 9

• Manufacturer Part Number: MT58L64V36F
• Description: (MT58LxxxLxxF) 2Mb SRAM
• Manufacturer: Micron Semiconductor

NOT RECOMENDED FOR NEW DESIGNS
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Voltage on V
V
Storage Temperature (plastic) ............ -55°C to +150°C
Junction Temperature** .................................... +150°C
Short Circuit Output Current ........................... 100mA
3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0°C ≤ T
2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0°C ≤ T
NOTE: 1. All voltages referenced to V
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_C.p65 – Rev. C, Pub. 11/02
IN
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
Relative to V
Relative to V
............................................... -0.5V to V
2. Overshoot:
3. MODE pin has an internal pull-up, and input leakage = ±10µA.
4. The load used for V
5. V
A
A
Undershoot: V
Power-up:
than the stated DC values. AC I/O curves are available upon request.
≤ +70°C; V
≤ +70°C; V
DD
Q should never exceed V
DD
DD
SS
SS
Q Supply
Supply
.................................... -0.5V to +4.6V
.................................... -0.5V to +4.6V
DD
DD
, V
V
V
= +3.3V +0.3V/-0.165V; V
IH
IL
IH
DD
≥ -0.7V for t ≤
≤ +4.6V for t ≤
≤ +3.6V and V
OH
Q = +3.3V +0.3V/-0.165V unless otherwise noted)
, V
OL
testing is shown in Figure 2 for 3.3V I/O and Figure 4 for 2.5V I/O. AC load current is higher
SS
DD
(GND).
. V
0V ≤ V
t
DD
KC/2 for I ≤ 20mA
Output(s) disabled,
Output(s) disabled,
t
DD
KC/2 for I ≤ 20mA
Data bus (DQx)
≤ 3.135V for t ≤ 200ms
0V ≤ V
0V ≤ V
0V ≤ V
CONDITIONS
CONDITIONS
and V
I
I
I
I
I
I
OH
OH
OH
OL
OL
OL
DD
IN
Inputs
= -4.0mA
= -2.0mA
= -1.0mA
Q + 0.5V
= 8.0mA
= 2.0mA
= 1.0mA
≤ V
DD
IN
IN
IN
DD
Q can be connected together for 3.3V I/O.
DD
≤ V
≤ V
≤ V
Q = +2.5V +0.4V/-0.125V unless otherwise noted)
Q (DQx)
DD
DD
DD
FLOW-THROUGH SYNCBURST SRAM
9
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
**Maximum junction temperature depends upon pack-
age type, cycle time, loading, ambient temperature and
airflow. See Micron Technical Note TN-05-14 for more
information.
SYMBOL
SYMBOL
V
V
V
V
V
V
V
V
V
IL
V
V
V
2Mb: 128K x 18, 64K x 32/36
DD
V
IL
V
IL
V
IH
DD
IL
OH
OH
DD
OL
OL
IH
OH
DD
IL
OL
O
IH
IL
Q
I
O
Q
I
Q
Micron Technology, Inc., reserves the right to change products or specifications without notice.
3.135
3.135
3.135
2.375
MIN
MIN
-0.3
-1.0
-1.0
-0.3
-1.0
-1.0
2.0
2.4
1.7
1.7
1.7
2.0
–
–
–
V
V
V
DD
DD
MAX
DD
MAX
V
0.8
1.0
1.0
0.4
3.6
Q + 0.3
0.7
1.0
1.0
0.7
0.4
3.6
2.9
–
+ 0.3
DD
–
–
+ 0.3
UNITS
UNITS
µA
µA
V
V
V
V
V
V
µA
µA
V
V
V
V
V
V
V
V
V
©2002, Micron Technology, Inc.
NOTES
NOTES
1, 2
1, 2
1, 4
1, 4
1, 5
1, 2
1, 2
1, 2
1, 4
1, 4
1, 4
1, 4
3
1
3
1
1