MT58L64V36F Micron Semiconductor, MT58L64V36F Datasheet - Page 11

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MT58L64V36F

Manufacturer Part Number
MT58L64V36F
Description
(MT58LxxxLxxF) 2Mb SRAM
Manufacturer
Micron Semiconductor
Datasheet
NOT RECOMENDED FOR NEW DESIGNS
TQFP CAPACITANCE
TQFP THERMAL RESISTANCE
NOTE: 1. This parameter is sampled.
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_C.p65 – Rev. C, Pub. 11/02
DESCRIPTION
Control Input Capacitance
Input/Output Capacitance (DQ)
Address Capacitance
Clock Capacitance
DESCRIPTION
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Top of Case)
Test conditions follow standard test methods
and procedures for measuring thermal
T
A
impedance, per EIA/JESD51.
= 25°C; f = 1 MHz;
CONDITIONS
V
DD
CONDITIONS
= 3.3V
11
FLOW-THROUGH SYNCBURST SRAM
SYMBOL
C
2Mb: 128K x 18, 64K x 32/36
C
C
C
CK
O
A
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TYP
2.7
2.5
2.5
4
SYMBOL
θ
θ
JA
JC
MAX
3.5
3.5
3.5
5
TYP
40
8
UNITS
p F
p F
p F
p F
UNITS NOTES
©2002, Micron Technology, Inc.
°C/W
°C/W
NOTES
1
1
1
1
1
1

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