MT58L64V36F Micron Semiconductor, MT58L64V36F Datasheet - Page 2

• Manufacturer Part Number: MT58L64V36F
• Description: (MT58LxxxLxxF) 2Mb SRAM
• Manufacturer: Micron Semiconductor

NOT RECOMENDED FOR NEW DESIGNS
NOTE: Functional Block Diagrams illustrate simplified device operation. See truth table, pin descriptions and timing diagrams for
2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM
MT58L128L18F_C.p65 – Rev. C, Pub. 11/02
SA0, SA1, SA
SA0, SA1, SA
MODE
ADSC#
ADSC#
MODE
ADSP#
ADSP#
BWE#
BWd#
BWb#
BWc#
BWa#
BWE#
BWb#
BWa#
ADV#
ADV#
GW#
GW#
CE2#
CE2#
OE#
OE#
CLK
CLK
CE#
CE2
CE#
CE2
detailed information.
17
16
WRITE REGISTER
WRITE REGISTER
ADDRESS
REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
BYTE “b”
BYTE “a”
REGISTER
ENABLE
BYTE “d”
BYTE “c”
BYTE “b”
BYTE “a”
REGISTER
ENABLE
CLR
AND LOGIC
ADDRESS
REGISTER
COUNTER
FUNCTIONAL BLOCK DIAGRAM
FUNCTIONAL BLOCK DIAGRAM
BINARY
COUNTER AND
CLR
BINARY
LOGIC
Q1
Q0
17
2
SA0-SA1
Q1
Q0
16
SA0'
SA1'
SA0-SA1
64K x 32/36
128K x 18
15
14
SA1'
SA0'
FLOW-THROUGH SYNCBURST SRAM
2
9
9
9
9
9
9
17
WRITE DRIVER
WRITE DRIVER
16
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
BYTE “b”
BYTE “a”
BYTE “d”
BYTE “b”
BYTE “a”
BYTE “c”
2Mb: 128K x 18, 64K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
9
9
9
9
9
9
128K x 9 x 2
MEMORY
64K x 8 x 4
64K x 9 x 4
MEMORY
ARRAY
ARRAY
(x32)
(x36)
36
18
36
SENSE
AMPS
SENSE
AMPS
18
36
18
2
4
BUFFERS
OUTPUT
OUTPUT
BUFFERS
©2002, Micron Technology, Inc.
REGISTERS
REGISTERS
INPUT
INPUT
18
36
DQPa
DQPb
DQs
DQs
DQPa
DQPb
DQPc
DQPd