MT28F160C34 Micron Technology, MT28F160C34 Datasheet - Page 8

• Manufacturer Part Number: MT28F160C34
• Description: FLASH MEMORY
• Manufacturer: Micron Technology

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DataSheet
COMMAND DEFINITIONS
WSM executes an internal algorithm generating the nec-
essary timing signals to program, erase, and verify data.
NOTE: 1. The command data is written through DQ0–DQ7
1 Meg x 16 3V Enhanced+ Boot Block Flash Memory
MT28F160C34_3.p65 – Rev. 3, Pub. 8/01
4
COMMAND
READ ARRAY
IDENTIFY DEVICE
READ STATUS REGISTER
WORD PROGRAM
BLOCK ERASE
PROGRAM/ERASE SUSPEND
PROGRAM/ERASE RESUME
CLEAR STATUS REGISTER
SOFT PROTECTION
OTP ENTRY
OTP EXIT
U
Once a specific command code has been entered, the
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10. X =
2. ID =
3. IA =
4. BA = Any address within the block to be selected
5. WA = Word address
6. AD = Array data
7. SRD = Data read from status register
8. PD = Data to be written at location WA
9. SPC = Soft protect command:
Manufacturer ID: 002Ch; Device ID (Top Boot): 4492h; Device ID (Bottom Boot): 4493h
Identify address: 00000h for manufacturer code and 00001h for device code
00h = Clear all soft protection
FFh = Set all soft protection
F0h = Clear addressed block soft protection
0Fh = Set addressed block soft protection
Don’t Care
OPERATION
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
WRITE
3V ENHANCED+ BOOT BLOCK FLASH MEMORY
Command Definitions
FIRST CYCLE
ADDRESS
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X
X
X
X
X
X
X
X
X
X
X
Table 3
8
CSM/INPUT OPERATION
See Table 3 for the CSM command definitions and data
for each of the bus cycles.
10h/40h
D0h
AFh
90h
70h
20h
B0h
50h
FFh
0Fh
FFh
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WRITE
WRITE
WRITE
WRITE
WRITE
READ
READ
READ
SECOND CYCLE
ADDRESS
WA
WA
BA
BA
BA
IA
X
X
1 MEG x 16
©2001, Micron Technology, Inc.
ADVANCE
DATA
D0h
SRD
AFh
SPC
FFh
AD
PD
ID