MT28F160C34 Micron Technology, MT28F160C34 Datasheet
MT28F160C34
Related parts for MT28F160C34
MT28F160C34 Summary of contents
Page 1
... Temperature Range Extended (-40ºC to +85ºC) Part Number Example: MT28F160C34FD-9 TET GENERAL DESCRIPTION The MT28F160C34 is a nonvolatile, electrically block- erasable (flash), programmable memory containing 16,777,216 bits organized as 1,048,576 words (16 bits). The MT28F160C34 is manufactured on 0.22µm process technology in a 46-ball FBGA package. ...
Page 2
... WE# OE# WSM I/O Logic Address Input A0–A19 Buffer Address Latch DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY Cross Reference for Abbreviated PART NUMBER MT28F160C34FD-9 TET MT28F160C34FD-9 BET FUNCTIONAL BLOCK DIAGRAM ...
Page 3
... 1F DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY TYPE Input Write Enable: Determines if a given cycle is a WRITE cycle. If WE# is LOW, the cycle is either a WRITE to the command state machine (CSM the memory array ...
Page 4
... Operation must be preceded by WRITE SETUP command. 5. The READ ARRAY command must be issued before reading the array after writing or erasing. 6. See Table 3 for the IDENTIFY DEVICE command. DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY ...
Page 5
... DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY 8 x 4K-Word Blocks 0 Parameter 32K-Word Block 1 Blocks 32K-Word Block 2 32K-Word Block ...
Page 6
... DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY 32K-Word Block 31 32K-Word Block 30 32K-Word Block 29 32K-Word Block 28 32K-Word Block ...
Page 7
... MEMORY ORGANIZATION The MT28F160C34 memory array is segmented into 31 blocks of 32K words, along with eight 4K-word pa- rameter blocks. The device is available with block archi- tecture mapped in either of the two configurations, with the parameter blocks located at the top or at the bottom of the memory array, as required by different micropro- cessors ...
Page 8
... F0h = Clear addressed block soft protection 0Fh = Set addressed block soft protection 10 Don’t Care DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY See Table 3 for the CSM command definitions and data for each of the bus cycles ...
Page 9
... The WSM successfully initiates an ERASE or PRO- GRAM operation only when V age range. For data protection required that RP# be held at a logic LOW level during a CPU reset. DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY CLEAR STATUS REGISTER The WSM can set to “ ...
Page 10
... A proper block address must be provided in an ERASE operation. If that addressed block is protected, then the SR1 bit is set (SR1 = 1) when WP DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY ...
Page 11
... DATA PROTECTION PROVIDED All blocks locked All blocks locked All blocks unlocked Soft-protected blocks locked DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY ERASE OPERATIONS in an array block to “1s.” After BLOCK ERASE CONFIRM is issued, the CSM responds only to an ERASE SUSPEND command until the WSM completes its task ...
Page 12
... There are 64 bits that are programmed at the factory with a unique 64-bit code that is not modifiable. The other 64-bit OTP area is left blank to program for DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY customer design requirements if needed ...
Page 13
... SR1 indicates the block lock status for that block. When monitoring the block lock status bit SR1, the correct status can only be obtained with WP# LOW. DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY ...
Page 14
... SR3 must be cleared before attempting additional PROGRAM/ERASE operations. 3. SR4 is cleared only by the CLEAR STATUS REGISTER command, but it does not prevent additional program operation attempts. DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY ...
Page 15
... SR3 must be cleared before attempting additional PROGRAM/ERASE operations. 3. SR5 is cleared only by the CLEAR STATUS REGISTER command in cases where multiple blocks are erased before full status is checked. DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY ...
Page 16
... Issue ERASE RESUME Command ERASE Continued NOTE: 1. See BLOCK ERASE Flowchart for complete erasure procedure. 2. See Word Programming Flowchart for complete programming procedure. DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY NO ...
Page 17
... YES Issue READ MEMORY Command Finished Reading ? YES Issue PROGRAM RESUME Command PROGRAM Resumed DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY BUS OPERATION COMMAND WRITE READ Standby Standby WRITE ...
Page 18
... V Q must be less than or equal 12V V is allowable for production only. PP DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY mum Ratings” may cause permanent damage to the de- 3 ...
Page 19
... PP CC STANDBY CURRENT NOTE dependent on cycle rates Automatic power savings (APS) mode reduces I DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY Q (MAX MHz; Other inputs ...
Page 20
... Input rise and fall times ................................................ <10ns Input timing reference level ....................................... V Output timing reference level .................................... V Output load ............................................................. C V 0.0V NOTE includes probe and fixture capacitance. L DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY Q CC Q/2 CC Q/2 ...
Page 21
... V IL TIMING PARAMETERS SYMBOL ACE t AOE t AA DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY ACE minus AOE after CE# falls before ACE is affected. READ CYCLE VALID ADDRESS DataSheet4U ...
Page 22
... The 12V V is for production only Typical values measured Assumes no system overhead. 7. Typical write times tested with checkerboard data pattern. DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY SYMBOL V ...
Page 23
... WP# HIGH hold time from status data valid OE# HIGH hold time from WE# HIGH NOTE: 1. Polling status register before 800ns (MAX). DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY DataSheet4U.com met may falsely indicate WRITE or ERASE completion. ...
Page 24
... VPS t RS NOTE: 1. Address inputs are “Don’t Care” but must be held stable 800ns (MAX). DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY WRITE/ERASE CYCLE WE#-CONTROLLED WRITE/ERASE Note 1 ...
Page 25
... WH t VPS NOTE: 1. Address inputs are “Don’t Care” but must be held stable 800ns (MAX). DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY WRITE/ERASE CYCLE CE#-CONTROLLED WRITE/ERASE Note 1 ...
Page 26
... Status Erase 1 Array Suspend Array Erase 1 Status Complete DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY Table 6 Command State Machine Current/Next States COMMAND INPUTS (and next state) Read Write Block Erase Prog ...
Page 27
... S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron is a registered trademark and the Micron logo and M logo are trademarks of Micron Technology, Inc. DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com ...
Page 28
... Corrected WRITE/ERASE Cycle timing diagram (CE#-Controlled) Rev. 2, ADVANCE .............................................................................................................................................................. 3/01 • Added a bottom boot block starting address • Updated package drawing Original document, ADVANCE ....................................................................................................................................... 2/01 DataSheet4U.com 1 Meg Enhanced+ Boot Block Flash Memory MT28F160C34_3.p65 – Rev. 3, Pub. 8/01 4 DataSheet U .com 3V ENHANCED+ BOOT BLOCK FLASH MEMORY DataSheet4U.com Micron Technology, Inc ...