MT28F160C34 Micron Technology, MT28F160C34 Datasheet - Page 4

• Manufacturer Part Number: MT28F160C34
• Description: FLASH MEMORY
• Manufacturer: Micron Technology

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DataSheet
TRUTH TABLE
NOTE: 1. L = V
1 Meg x 16 3V Enhanced+ Boot Block Flash Memory
MT28F160C34_3.p65 – Rev. 3, Pub. 8/01
4
Standby
RESET
READ
Output Disable
ERASE SETUP
ERASE CONFIRM
WRITE SETUP
WRITE
READ ARRAY
ERASE SETUP
ERASE CONFIRM
WRITE SETUP
WRITE
READ ARRAY
Manufacturer
Device (top boot)
Device (bottom boot)
U
.com
FUNCTION
READING
WRITE/ERASE (EXCEPT SOFT PROTECTED BLOCKS)
WRITE/ERASE (SOFT-PROTECTED BLOCKS)
DEVICE IDENTIFICATION
2. V
3. Operation must be preceded by ERASE SETUP command.
4. Operation must be preceded by WRITE SETUP command.
5. The READ ARRAY command must be issued before reading the array after writing or erasing.
6. See Table 3 for the IDENTIFY DEVICE command.
4
4
PPH 1
IL
5
5
= 1.65V–3.465V and V
(LOW), H = V
3
3
1
IH
(HIGH), X = V
6
PPH 2
= 12V.
3V ENHANCED+ BOOT BLOCK FLASH MEMORY
IL
or V
IH
2
(“Don’t Care”).
DataSheet4U.com
RP#
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
2
4
CE#
H
X
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
OE#
H
H
H
H
H
X
X
H
H
H
H
H
H
L
L
L
L
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WE#
X
X
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
WP#
X
X
X
X
X
X
X
X
X
X
H
X
H
X
X
X
X
V
V
V
V
V
X
X
X
X
X
PPH
X
PPH
X
X
PPH
X
PPH
X
X
X
X
PP
A0
X
X
X
X
H
H
X
X
X
X
X
X
X
X
X
X
L
1 MEG x 16
Data-Out Data-Out
DQ0–DQ7 DQ8–DQ15
10h/40h
10h/40h
Data-In
Data-In
High-Z
High-Z
High-Z
D0h
D0h
20h
20h
2Ch
92h
93h
FFh
FFh
©2001, Micron Technology, Inc.
ADVANCE
Data-In
Data-In
High-Z
High-Z
High-Z
00h
44h
44h
X
X
X
X
X
X
X
X