MT28F160C34 Micron Technology, MT28F160C34 Datasheet - Page 14
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MT28F160C34
Manufacturer Part Number
MT28F160C34
Description
FLASH MEMORY
Manufacturer
Micron Technology
Datasheet
1.MT28F160C34.pdf
(28 pages)
DataSheet4U.com
www.DataSheet4U.com
DataSheet
NOTE: 1. Full status register check can be done after each word or after a sequence of words.
1 Meg x 16 3V Enhanced+ Boot Block Flash Memory
MT28F160C34_3.p65 – Rev. 3, Pub. 8/01
FULL STATUS REGISTER CHECK FLOW
4
U
.com
Automated Word Programming
Word Program Passed
Read Status Register
Read Status Register
Issue Word Address
Full Status Register
Issue WRITE SETUP
2. SR3 must be cleared before attempting additional PROGRAM/ERASE operations.
3. SR4 is cleared only by the CLEAR STATUS REGISTER command, but it does not prevent additional program operation
Check (optional)
and Word Data
Word Program
attempts.
Command
Completed
SR7 = 1?
SR1 = 0?
SR3 = 0?
SR4 = 0?
Start
Bits
Bits
YES
YES
YES
YES
Flowchart
1
Figure 4
NO
NO
NO
NO
PROGRAM Attempted
Word Program Failed
on a Locked Block
V
PROGRAM
PP
SUSPEND?
NO
Range Error
3V ENHANCED+ BOOT BLOCK FLASH MEMORY
SUSPEND Loop
PROGRAM
YES
DataSheet4U.com
14
Standby
Standby
Standby
BUS
OPERATION COMMAND
WRITE
WRITE
READ
Standby
Repeat for subsequent words.
Write FFh after the last word programming operation
to reset the device to read array mode.
BUS
OPERATION COMMAND
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WRITE
SETUP
WRITE
DATA
Data = 40h or 10h
Data = Word to be
COMMENTS
Addr = Don’t Care
Addr = Address of word to be
Status register data
Toggle OE# or CE# to
update status register.
Check SR7
1 = Ready, 0 = Busy
COMMENTS
Check SR1
1 = Detect locked block
Check SR3
1 = Detect V
Check SR4
1 = Word program error
programmed
programmed
1 MEG x 16
2
3
PP
©2001, Micron Technology, Inc.
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ADVANCE