HY27UA1G1M Hynix Semiconductor, HY27UA1G1M Datasheet - Page 43

• Manufacturer Part Number: HY27UA1G1M
• Description: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

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MARKING INFORMATION
Rev 0.5 / Oct. 2004
- hynix
- KOR
- HY27xAxx121mTxB
- Y: Year (ex: 4=year 2004, 05= year 2005)
- ww: Work Week (ex: 12= work week 12)
- xx: Process Code
Note
- Capital Letter
- Small Letter
WSOP1
HY: HYNIX
27: NAND Flash
x: Power Supply
A: Classification
xx: Bit Organization
1G: Density
1: Mode
M: Version
x: Package Type
x: Package Material
x: Operating Temperature
x: Bad Block
Packag
TSOP1
FBGA
/
/
H
x
Y
x
2
x
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
: Hynix Symbol
: Origin Country
: Part Number
: U(2.7V~3.6V), S(1.7V~2.2V)
: Single Level Cell+Double Die
: 08(x8), 16(x16)
: 1Gb
: 1nCE & 1R/nB; CE don't care
: 1st Generation
: T(TSOP1), V(WSOP1), F(FBGA)
: Blank(Normal), P(Lead Free)
: C(0℃~70℃), E(-25℃~85℃)
: B(Included Bad Block), S(1~5 Bad Block),
: Fixed Item
: Non-fixed Item
7
x
I(-40℃~85℃)
P(All Good Block)
Marking Example
x
A
x
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
Y
x
W
1
W
G
K
O
1
x
M
R
x
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