HY27UA1G1M Hynix Semiconductor, HY27UA1G1M Datasheet - Page 21

• Manufacturer Part Number: HY27UA1G1M
• Description: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

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Table 6: Status Register Bit
Read Electronic Signature
The device contains a Manufacturer Code and Device Code. To read these codes two steps are required:
1. first use one Bus Write cycle to issue the Read Electronic Signature command (90h)
2. then subsequent Bus Read operations will read the Manufacturer Code and the Device Code until another command
is issued.
Refer to Table, Read Electronic Signature for information on the addresses.
Automatic Page 0 Read at Power-Up
Automatic Page 0 Read at Power-Up is an option available on all devices belonging to the NAND Flash 528 Byte/264
Word Page family. It allows the microcontroller to directly download boot code from page 0, without requiring any
command or address input sequence. The Automatic Page 0 Read option is particularly suited for applications that
boot from the NAND.
Devices delivered with Automatic Page 0 Read at Power-Up can have the Sequential Row Read option either enabled
or disabled.
Rev 0.5 / Oct. 2004
SR4, SR3, SR2
HY27(U/S)A081G1M
HY27(U/S)A161G1M
Part Number
SR7
SR6
SR5
SR0
Bit
Program/ Erase/ Read
Program/Erase/Read
Write Protection
Generic Error
Controller
Controller
Reserved
NAME
Manufacture Code
00ADh
ADh
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Logic Level
Don
'1'
'0'
'1'
'0'
'1'
'0'
'
'1'
'0'
t Care
Device Code
0074h
79h
Not Protected
Protected
P/E/R C Inactive, device ready
P/E/R C active, device busy
P/E/R C inactive, device ready
P/E/R C active, device busy
Error - Operation failed
No Error - Operation successful
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
Definition
Bus Width
x16
x8
21