HY27UA1G1M Hynix Semiconductor, HY27UA1G1M Datasheet - Page 28

• Manufacturer Part Number: HY27UA1G1M
• Description: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
• Manufacturer: Hynix Semiconductor

www.DataSheet4U.com
Table 14: AC Characteristics for Command, Address, Data Input (3.3V Device and 1.8V Device)
Note 1: If tELWL is less than 10ns, tWLWH must be minimum 35ns, otherwise, tWLWH may be minimum 25ns.
Rev 0.5 / Oct. 2004
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Symbol
ALLWL
ALHWL
CLHWL
CLLWL
DVWH
ELWL
WHALH
WHALL
WHCLH
WHCLL
WHDX
WHEH
WHWH
WLWH
WLWL
Symbol
t
t
Alt.
t
t
t
t
t
t
t
t
t
ALS
CLS
ALH
CLH
WH
WP
WC
DS
DH
CH
CS
Address Latch Low to Write Enable Low
Address Latch Hith to Write Enable Low
Command Latch High to Write Enable Low
Command Latch Low to Write Enable Low
Data Valid to Write Enable High
Chip Enable Low to Write Enable Low
Write Enable High to Address Latch High
Write Enable High to Address Latch Low
Write Enable High to Command Latch High
Write Enable High to Command Latch Low
Write Enable High to Data Transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Write Enable Low to Write Enable High
Write Enable Low to Write Enable Low
Parameter
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
ALE Setup time
CL Setup time
Data Setup time
CE Setup time
ALE Hold time
CLE hold time
Data Hold time
CE Hold time
WE High Hold
time
WE Pulse Width
Write Cycle time
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Device
3.3V
15
40
60
20
10
10
10
10
0
0
0
Device
1.8V
20
60
80
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
28