HP4410DY Fairchild Semiconductor, HP4410DY Datasheet - Page 2

• Manufacturer Part Number: HP4410DY
• Description: HP4410DY - Discrete Commercial N-channel Logic Level Power MOSFET, 30V, 10A, 0.0135 Ohm @ VGS = 10V, SO-8 Package
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Source to Drain Diode Specifications
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Ambient
Source to Drain Diode Voltage
Reverse Recovery Time
1. T
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (10 µ s Pulse Width) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Derate Above 25
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
A
= 25
o
C to 125
PARAMETER
PARAMETER
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
GS
= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
T
A
= 25
T
A
= 25
o
C, Unless Otherwise Specified
o
SYMBOL
C, Unless Otherwise Specified
SYMBOL
V
Q
r
BV
t
DS(ON)
t
d(OFF)
C
C
GS(TH)
I
d(ON)
C
R
I
g(TOT)
Q
Q
DSS
GSS
V
OSS
RSS
ISS
θ JA
t
t
DSS
t
SD
gs
gd
r
rr
f
I
V
V
V
V
I
I
V
R
R
V
V
(Figure 4)
Pulse Width < 10s (Figure 11)
Device Mounted on FR-4 Material
I
I
D
D
D
SD
SD
GS
DS
DS
GS
DD
DS
DS
L
GS
= 250 µ A, V
= 8A, V
= 10A, V
= 25 Ω , V
= 2.3A (Figure 7)
= 2.3A, dI
= 30V, V
= 30V, V
= 15V, V
= 25V, V
= V
= ± 16V
= 25V, I
= 6 Ω
DS
GS
TEST CONDITIONS
TEST CONDITIONS
, I
GS
GEN
D
D
GS
GS
GS
GS
= 4.5V (Figures 6, 8)
GS
SD
= 10V (Figures 6, 8)
≅ 1A,
= 250 µ A (Figure 9)
/dt = 100A/ µ s
= 0V
= 0V, T
= 10V,
= 10V, I
= 0V, f = 1MHz
= 0V
J
, T
A
D
DGR
DSS
STG
= 55
≅ 10A
pkg
DM
GS
D
D
L
o
C
MIN
MIN
30
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
HP4410DY
-55 to 150
0.02
± 16
300
260
2.5
30
30
10
50
0.015
0.011
1600
TYP
0.75
TYP
685
115
7.5
5.8
50
15
70
20
35
9
-
-
-
-
-
-
0.0135
0.020
MAX
MAX
100
100
1.1
25
30
20
80
60
50
80
1
-
-
-
-
-
-
-
HP4410DY Rev. B
UNITS
W/
UNITS
UNITS
o
o
o
o
W
V
V
V
A
A
C/W
µ A
µ A
nA
nC
nC
nC
pF
pF
pF
ns
C
C
C
ns
ns
ns
ns
o
V
V
Ω
Ω
V
C