RD30HVF1 Mitsumi Electronics, Corp., RD30HVF1 Datasheet - Page 7

• Manufacturer Part Number: RD30HVF1
• Description: Silicon Mosfet Power Transistor,175mhz,30w
• Manufacturer: Mitsumi Electronics, Corp.

RD30HVF1
RD30HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)
[MHz]
Freq.
1000
1100
100
150
175
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
(mag)
RoHS Compliance,
0.867
0.879
0.885
0.888
0.905
0.915
0.926
0.933
0.936
0.945
0.950
0.951
0.954
0.957
0.962
0.963
0.963
0.963
0.962
0.964
0.966
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
S11
-172.4
-176.3
-177.5
-179.1
178.5
176.2
174.1
171.8
169.5
167.6
165.6
163.6
161.7
159.9
158.2
156.5
154.8
153.2
151.6
150.1
146.9
(ang)
(mag)
8.747
5.523
4.571
3.852
2.877
2.202
1.754
1.422
1.167
0.985
0.842
0.725
0.635
0.559
0.495
0.449
0.407
0.366
0.337
0.315
0.275
MITSUBISHI ELECTRIC
S21
Silicon MOSFET Power Transistor,175MHz,30W
(ang)
-12.1
72.7
61.2
56.4
52.4
44.1
37.1
31.4
25.8
20.9
17.2
13.3
-0.5
-3.8
-5.2
-6.6
-9.9
7/8
9.8
7.2
3.7
1.3
(mag)
0.015
0.014
0.013
0.012
0.010
0.009
0.007
0.006
0.005
0.004
0.005
0.005
0.005
0.007
0.007
0.008
0.009
0.011
0.011
0.013
0.015
MITSUBISHI RF POWER MOS FET
S12
RD30HVF1
(ang)
-11.6
-18.8
-22.2
-24.2
-26.2
-27.0
-24.4
-18.5
21.6
35.6
45.7
53.5
58.4
61.6
60.7
61.5
63.1
65.6
62.3
-8.2
8.0
(mag)
0.687
0.723
0.740
0.760
0.806
0.825
0.853
0.879
0.887
0.902
0.914
0.918
0.928
0.933
0.936
0.943
0.947
0.947
0.953
0.955
0.958
S22
-166.3
-168.8
-169.6
-170.5
-172.5
-174.8
-177.1
-179.4
178.4
176.1
174.1
172.2
170.2
168.4
166.6
164.8
163.3
161.7
159.9
158.7
155.5
(ang)
10 Jan 2006