RD30HVF1 Mitsumi Electronics, Corp., RD30HVF1 Datasheet - Page 5

• Manufacturer Part Number: RD30HVF1
• Description: Silicon Mosfet Power Transistor,175mhz,30w
• Manufacturer: Mitsumi Electronics, Corp.

INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
RD30HVF1
C3:2200pF,330uF in parallel
C1:2200pF 10uF in parallel
C2:2200pF*2 in parallel
L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
RF-in
RoHS Compliance,
ELECTROSTATIC SENSITIVE DEVICE
56pF
100pF
OBSERVE HANDLING PRECAUTIONS
8.2kOHM
33pF
100
100pF
C1
90
51
MITSUBISHI ELECTRIC
34
L1
100pF
32
Vgg
27
100OHM
9.1kOHM
12
RD30HVF1
Silicon MOSFET Power Transistor,175MHz,30W
175MHz
Dimensions:mm
5/8
10pF
Note:Board material-Teflon substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
10
8pF
L2
32
Vdd
44
43pF 5pF 50pF
54
L1
MITSUBISHI RF POWER MOS FET
RD30HVF1
90
C2
100
C3
56pF
10.8
4.8
RF-OUT
8
10 Jan 2006