RD30HVF1 Mitsumi Electronics, Corp., RD30HVF1 Datasheet - Page 4

• Manufacturer Part Number: RD30HVF1
• Description: Silicon Mosfet Power Transistor,175mhz,30w
• Manufacturer: Mitsumi Electronics, Corp.

TEST CIRCUIT(f=175MHz)
RD30HVF1
80
60
40
20
50
40
30
20
10
0
0
4
0
Ta=25°C
f=175MHz
Pin=1.0W
Idq=0.5A
Zg=ZI=50 ohm
Ta=+25°C
f=175MHz
Vdd=12.5V
Idq=0.5A
Vdd-Po CHARACTERISTICS
Pin-Po CHARACTERISTICS
6
10
RoHS Compliance,
ELECTROSTATIC SENSITIVE DEVICE
Gp
8
Pin(dBm)
OBSERVE HANDLING PRECAUTIONS
Vdd(V)
Po
20
10
3 3
12
 3
30
Po
Idd
MITSUBISHI ELECTRIC
14
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
Silicon MOSFET Power Transistor,175MHz,30W
4/8
50
40
30
20
10
0
8
6
4
2
0
0
2
MITSUBISHI RF POWER MOS FET
Vds=10V
Tc=-25~+75°C
Vgs-Ids CHARACTERISTICS 2
RD30HVF1
0.5
Pin-Po CHARACTERISTICS
3
Idd
1
Pin(W)
Vgs(V)
Po
1.5
d
-25°C
4
Ta=25°C
f=175MHz
Vdd=12.5V
Idq=0.5A
2
+75°C
2.5
5
100
80
60
40
20
0
+25°C
10 Jan 2006