RD30HVF1 Mitsumi Electronics, Corp., RD30HVF1 Datasheet - Page 3

• Manufacturer Part Number: RD30HVF1
• Description: Silicon Mosfet Power Transistor,175mhz,30w
• Manufacturer: Mitsumi Electronics, Corp.

TYPICAL CHARACTERISTICS
RD30HVF1
100
10
140
120
100
80
60
40
20
8
6
4
2
0
80
60
40
20
0
0
Vds VS. Coss CHARACTERISTICS
0
0
AMBIENT TEMPERATURE Ta(°C)
0
Ta=+25°C
Vds-Ids CHARACTERISTICS
AMBIENT TEMPERATURE
Ta=+25°C
f=1MHz
DRAIN DISSIPATION VS.
2
40
RoHS Compliance,
ELECTROSTATIC SENSITIVE DEVICE
5
OBSERVE HANDLING PRECAUTIONS
4
80
Vds(V)
Vds(V)
10
120
6
15
160
8
MITSUBISHI ELECTRIC
10
200
20
Vgs=5.5V
Vgs=5V
Vgs=4.5V
Vgs=4V
Vgs=3.5V
Vgs=3V
Silicon MOSFET Power Transistor,175MHz,30W
3/8
20
16
12
200
180
160
140
120
100
8
4
0
10
80
60
40
20
8
6
4
2
0
Vds VS. Crss CHARACTERISTICS
Vds VS. Ciss CHARACTERISTICS
0
0
0
0
Vgs-Ids CHARACTERISTICS
Ta=+25°C
f=1MHz
MITSUBISHI RF POWER MOS FET
Ta=+25°C
Vds=10V
Ta=+25°C
f=1MHz
RD30HVF1
1
5
5
Vds(V)
2
Vgs(V)
Vds(V)
10
10
3
15
15
4
20
20
5
10 Jan 2006