MX26L12811MC ETC-unknow, MX26L12811MC Datasheet - Page 24

• Manufacturer Part Number: MX26L12811MC
• Description: 128m [x8/x16] Single 3v Page Mode Mtp Memory
• Manufacturer: ETC-unknow

AC Characteristics --Read-Only Operations (1,2)
P/N:PM0990
NOTES:CEX low is defined as the first edge of CE that enables the device. CEX high is defined at the first edge of CE
that disables the device (see Table 2).
1. See AC Input/Output Reference Waveforms for the maximum allowable input slew rate.
2. OE may be delayed up to t ELQV -t GLQV after the first edge of CE that enables the device (see Table 2) without
3. See Figures 10-11, Transient Input/Output Reference Waveform for VCCQ = 3.0V - 3.6V, and Transient Equivalent
4. When reading the MTP array a faster tGLQV (R15) applies. Non-array reads refer to status register reads, query
5. Sampled, not 100% tested.
6. For devices configured to standard word/byte read mode, R14 (tAPA) will equal R1 (tAVQV).
Versions
(All units in ns unless otherwise noted)
Sym
tAVAV
tAVQV
tELQV
tGLQV
tELQX
tGLQX
tEHQZ
tGHQZ
tOH
tEHEL
tAPA
tGLQV
impact on t ELQV .
Testing Load Circuit for testing characteristics.
reads, or device identifier reads.
Parameter
Read/Write Cycle Time
Address to Output Delay
CEX to Output Delay
OE to Non-Array Output Delay
CEX to Output in Low Z
OE to Output in Low Z
CEX High to Output in High Z
OE High to Output in High Z
Output Hold from Address, CEX, or OE
Change, Whichever Occurs First
CEx High to CEx Low
Page Address Access Time
OE to Array Output Delay
24
MX26L12811MC
VCCQ
Notes
VCC
2, 4
5, 6
5
5
5
5
5
5
4
Min
120
3.0V-3.6V(3)
3.0V-3.6V(3)
0
0
0
0
REV. 1.0, OCT. 29, 2003
Max
120
120
50
35
15
25
25