TIM3742-45SL-341 TOSHIBA Semiconductor CORPORATION, TIM3742-45SL-341 Datasheet
TIM3742-45SL-341
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TIM3742-45SL-341 Summary of contents
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... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM3742-45SL-341 n HIGH GAIN G1dB=11dB at 3.3GHz to 3.6GHz n BROAD BAND INTERNALLY MATCHED FET ...
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... Gate-Source Voltage Drain Current Total Power Dissipation (Tc Channel Temperature Storage Temperature PACKAGE OUTLINE (2-16G1B) 4 – C1.0 (2) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. TIM3742-45SL-341 SYMBOL ...
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... RF PERFORMANCE Output Power (Pout) vs. Frequency V =10V DS I 9.6A DS Pin=35.5dBm 3.3 Output Power(Pout) vs. Input Power(Pin) 49 freq.=3.6GHz 48 V =10V TIM3742-45SL-341 3.4 3.5 Frequency (GHz) Pout add 32 34 Pin(dBm ...
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... Power Dissipation(PT) vs. Case Temperature(Tc) 130 110 IM3 vs. Output Power Characteristics -10 V =10V DS I 9.6A DS freq.=3.6GHz -20 f=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM3742-45SL-341 80 120 Tc 200 160 38 40 ...