TIM3742-30SL-341 Toshiba, TIM3742-30SL-341 Datasheet

TIM3742-30SL-341

Manufacturer Part Number

TIM3742-30SL-341

Description

Manufacturer

Toshiba

Datasheet

1.TIM3742-30SL-341.pdf (4 pages)

Specifications of TIM3742-30SL-341

Configuration

Single

Gate-source Voltage (max)

Drain-source Volt (max)

15V

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Lead Free Status / Rohs Status

Compliant

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TIM3742-30SL-341

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TIM3742-30SL-341

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MICROWAVE SEMICONDUCTOR

TECHNICAL DATA

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )

ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is presented only as a guide for the applications of our products. No responsibility is

FEATURES

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Output Power at 1dB Gain

Compression Point

Power Gain at 1dB Gain

Compression Point

Drain Current

Gain Flatness

Power Added Efficiency

3rd Order Intermodulation

Distortion

Drain Current

Channel Temperature Rise

Recommended gate resistance(Rg) : Rg= 28 Ω ( MAX.)

Transconductance

Pinch-off Voltage

Saturated Drain Current

Gate-Source Breakdown

Voltage

Thermal Resistance

LOW INTERMODULATION DISTORTION

HIGH POWER

IM3=-45 dBc at Po= 34.5 dBm,

Single Carrier Level

P1dB=45.0 dBm at 3.3GHz to 3.6GHz

CHARACTERISTICS

SYMBOL

ΔTch

th(c-c)

GSoff

DS1

DS2

DSS

ΔG

GSO

1dB

add

Channel to Case

(VDS X IDS + Pin – P1dB)

(Single Carrier Level)

= 10A

= 100mA

= -350μA

Two-Tone Test

= 3.3 to 3.6GHz

CONDITIONS

= 3V

Po=34.5 dBm

= 0V

X Rth(c-c)

HIGH GAIN

BROAD BAND INTERNALLY MATCHED FET

HERMETICALLY SEALED PACKAGE

G1dB=11.0dB at 3.3GHz to 3.6GHz

MICROWAVE POWER GaAs FET

=10

TIM3742-30SL-341

UNIT

° C/W

dBm

dBc

° C

MIN.

44.0

10.0

MIN.

-1.0

-42

⎯

-5

Rev. Jun. 2006

TYP. MAX.

45.0

11.0

TYP. MAX.

6300

-45

7.0

-2.5

1.0

⎯

±0.8

100

8.0

-4.0

⎯

1.3

⎯

Related parts for TIM3742-30SL-341

TIM3742-30SL-341 Summary of contents

Page 1

... SYMBOL CONDITIONS 10A GSoff 100mA DSS -350μA GSO GS R Channel to Case th(c-c) TIM3742-30SL-341 UNIT MIN. TYP. MAX. dBm 44.0 45.0 dB 10.0 11.0 ⎯ A 7.0 ⎯ ⎯ dB ⎯ dBc -42 -45 ⎯ A 7.0 ° C ⎯ ⎯ UNIT MIN. TYP. MAX. ⎯ mS 6300 V -1 ...

Page 2

... ABSOLUTE MAXIMUM RATINGS ( Ta= 25 ° CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage PACKAGE OUTLINE (2-16G1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM3742-30SL-341 SYMBOL ...

Page 3

... RF PERFORMANCE Output Power (Pout) vs. Frequency V =10V DS ≅ Pin=34.0dBm 3.3 Output Power(Pout) vs. Input Power(Pin) 48 freq.=3.6GHz 47 V =10V DS ≅ TIM3742-30SL-341 3.4 3.5 Frequency (GHz) Pout ηadd 32 34 Pin(dBm ...

Page 4

... Power Dissipation(PT) vs. Case Temperature(Tc) 120 100 IM3 vs. Output Power Characteristics -10 V =10V DS ≅ freq.=3.6GHz -20 Δf=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM3742-30SL-341 80 120 Tc( ° 200 160 38 40 ...

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