tim3742-8sl TOSHIBA Semiconductor CORPORATION, tim3742-8sl Datasheet
tim3742-8sl
Manufacturer Part Number
tim3742-8sl
Description
Microwave Power Gaas Fet
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TIM3742-8SL.pdf
(4 pages)
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MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 ° C )
ELECTRICAL CHARACTERISTICS ( Ta= 25 ° C )
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3
Distortion
Drain Current
Channel Temperature Rise
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
FEATURES
Single Carrier Level
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Recommended Gate Resistance(Rg): 150 Ω (Max.)
LOW INTERMODULATION DISTORTION
HIGH POWER
rd
IM3=-45 dBc at Pout= 28.5dBm
P1dB=39.5dBm at 3.7GHz to 4.2GHz
CHARACTERISTICS
CHARACTERISTICS
Order Intermodulation
SYMBOL
SYMBOL
R
V
V
G
P
ΔTch
IDS2
I
I
η
th(c-c)
IM3
Gm
GSoff
DS1
DSS
ΔG
GSO
1dB
1dB
add
(VDS X IDS +Pin–P1dB)
V
I
V
I
V
V
I
Channel to Case
(Single Carrier Level)
DS
DS
GS
DS
DS
DS
GS
f= 3.7 to 4.2GHz
CONDITIONS
Two-Tone Test
CONDITIONS
= 3.0A
= 30mA
Po=28.5dBm
= -100μA
= 3V
=
=
= 0V
VDS= 10V
X Rth(c-c)
3V
3V
HIGH GAIN
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
G1dB=10.0dB at 3.7GHz to 4.2GHz
MICROWAVE POWER GaAs FET
TIM3742-8SL
UNIT
UNIT
° C/W
dBm
dBc
mS
dB
dB
° C
%
A
A
V
A
V
MIN.
38.5
MIN.
-1.0
-42
9.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-5
TYP. MAX.
39.5
10.0
TYP. MAX.
1800
Rev. Jun. 2006
-45
2.2
2.2
-2.5
36
5.2
2.5
⎯
⎯
⎯
±0.6
2.6
2.6
80
-4.0
⎯
⎯
⎯
⎯
3.8
⎯
⎯
⎯
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tim3742-8sl Summary of contents
Page 1
... 3. GSoff 30mA DSS -100μA GSO GS R Channel to Case th(c-c) TIM3742-8SL UNIT MIN. TYP. MAX. dBm 38.5 39.5 dB 9.0 10.0 ⎯ A 2.2 ⎯ ⎯ dB ⎯ dBc -42 -45 ⎯ A 2.2 ° C ⎯ ⎯ UNIT MIN. TYP. MAX. ⎯ mS 1800 V -1 ...
Page 2
... Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 ° C) Channel Temperature Storage Temperature PACKAGE OUTLINE (2-11D1B) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C. TIM3742-8SL SYMBOL UNIT ...
Page 3
... RF PERFORMANCE Output Power (Pout) vs. Frequency V =10V DS ≅2. Pin=29.5dBm 3.7 Output Power(Pout) vs. Input Power(Pin) 42 freq.=4.2GHz 41 V =10V DS ≅2. TIM3742-8SL 3.8 3.9 4.0 4.1 Frequency (GHz) Pout ηadd 26 28 Pin(dBm ...
Page 4
... Power Dissipation vs. Case Temperature IM3 vs. Output Power Characteristics -10 V =10V DS ≅2. freq.=4.2GHz -20 Δf=5MHz -30 -40 -50 - Pout (dBm) @Single carrier level TIM3742-8SL 80 120 160 Tc (° 200 32 34 ...