tim3742-45sl TOSHIBA Semiconductor CORPORATION, tim3742-45sl Datasheet
tim3742-45sl
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tim3742-45sl Summary of contents
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... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM3742-35SL n HIGH GAIN G1dB=10.0dB at 3.7GHz to 4.2GHz n BROAD BAND INTERNALLY MATCHED ...
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... Gate-Source Voltage Drain Current Total Power Dissipation (Tc Channel Temperature Storage Temperature PACKAGE OUTLINE (2-16G1B) 4 – C1.0 (2) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. TIM3742-35SL SYMBOL ...
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... RF PERFORMANCES Output Power (Pout) vs. Frequency VDS=10V IDS 8.0A Pin=35.5dBm 3.6 Output Power(Pout) vs. Input Power(Pin) freq.=4.2GHz VDS=10V TIM3742-35SL 3.7 3.8 3.9 4.0 Frequency(GHz) Pout add 32 34 Pin(dBm) 3 4.1 4.2 4 ...
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... Power Dissipation(PT) vs. Case Temperature(Tc) 120 100 IM3 vs. Power Characteristics -10 VDS=10V IDS 8.0A freq.=4.2GHz -20 f=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM3742-35SL 80 120 Tc 200 160 38 40 ...