TIM3742-30SL TOSHIBA Semiconductor CORPORATION, TIM3742-30SL Datasheet
TIM3742-30SL
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TIM3742-30SL Summary of contents
Page 1
... SYMBOL CONDITIONS 10A GSoff 100mA DSS -350 A GSO GS R Channel to Case th(c-c) TIM3742-30SL UNIT MIN. TYP. MAX. dBm 44.0 45.0 dB 9.0 10 dBc -42 -45 A 7.0 C UNIT MIN. TYP. MAX. mS 6300 V -1.0 -2 C/W 1.0 Rev. Jun. 2006 8 ...
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... Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc Channel Temperature Storage PACKAGE OUTLINE (2-16G1B) 4 – C1.0 (2) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. TIM3742-30SL SYMBOL ...
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... RF PERFORMANCE Output Power (Pout) vs. Frequency V =10V Pin=35.0dBm 3.3 Output Power(Pout) vs. Input Power(Pin) 48 freq.=4.2GHz 47 V =10V TIM3742-30SL 3.4 3.5 Frequency (GHz) Pout add 32 34 Pin(dBm ...
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... Power Dissipation(PT) vs. Case Temperature(Tc) 120 100 IM3 vs. Output Power Characteristics -10 V =10V freq.=4.2GHz -20 f=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM3742-30SL 80 120 Tc 200 160 38 40 ...