MBM30LV0128 Fujitsu Microelectronics, Inc., MBM30LV0128 Datasheet - Page 17

• Manufacturer Part Number: MBM30LV0128
• Description: Flash Memory 128 M 16 M X 8 Bit Nand-type
• Manufacturer: Fujitsu Microelectronics, Inc.

2. AC Characteristics (Note 1)
CLE Setup Time
CLE Hold Time
CE Setup Time
CE Hold Time
Write Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
WP High to WE Low
Ready to RE Falling Edge
Read Pulse Width
Read Cycle Time
RE Access Time (Serial Data Access)
CE High Time for the Last Address in Serial Read Cycle (Note 3)
RE Access Time (ID Read)
RE High to Output High Impedance
CE High to Output High Impedance
RE High Hold Time
Output High Impedance to RE Falling Edge
RE Access Time (Status Read)
CE Access Time (Status Read)
WE High to RE Low
ALE Low to RE Low (ID Read)
CE Low to RE Low (ID Read)
Data Transfer from Memory Cell Array to Register
WE High to Busy
ALE Low to RE Low (Read Cycle)
Parameter
Symbol
t
t
t
t
t
t
t
REAID
t
t
t
t
t
t
t
t
t
RSTO
CSTO
t
t
t
t
t
t
t
t
t
t
t
WHR
t
REA
CEH
RHZ
CHZ
REH
CLS
CLH
ALS
ALH
WW
t
AR1
AR2
WP
WC
WH
t
WB
CS
CH
DS
DH
RR
RP
RC
CR
IR
R
MBM30LV0128
Min.
100
100
100
100
10
10
25
10
20
10
50
15
20
30
50
15
15
60
50
0
0
0
0
Value
Max.
100
35
35
30
20
35
45
7
(Continued)
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
17