MBM30LV0128 Fujitsu Microelectronics, Inc., MBM30LV0128 Datasheet - Page 16

• Manufacturer Part Number: MBM30LV0128
• Description: Flash Memory 128 M 16 M X 8 Bit Nand-type
• Manufacturer: Fujitsu Microelectronics, Inc.

16
MBM30LV0128
1. DC Characteristics
Sequential Read Current
Command Address Input Current
Data Input Current
Program Current
Erase Current
Stand-by Current (TTL)
Stand-by Current (CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
Output High Voltage Level
Output Low Voltage Level
Output Low Current (R/B)
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
V
I
I
I
I
I
I
I
V
V
V
I
I
CC1
CC3
CC4
CC6
CC7
SB1
SB2
I
LO
OL
LI
OH
OL
IH
IL
t
I
t
CE
WP
CE
WP
V
V
I/O pins
Except I/O pins
I
I
V
CYCLE
OUT
CYCLE
OH
OL
IN
OUT
OL
2.1 mA
0 to 3.6 V
Conditions
V
V
0.4 V
0 mA
SE
SE
400 A
0 to 3.6 V
IH
CC
50 ns, CE V
50 ns, CE V
,
0.2 V,
0 V/V
0 V/ V
CC
CC
IL
,
IL
Min.
2.0
2.0
2.4
0.3
8
Value
Typ.
10
10
10
10
10
10
10
V
V
CC
CC
Max.
q 0.3
0.8
0.4
20
20
20
20
20
50
1
10
10
0.3
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
A
A
A