MBM29DL16XTE70PFTN Meet Spansion Inc., MBM29DL16XTE70PFTN Datasheet - Page 36

• Manufacturer Part Number: MBM29DL16XTE70PFTN
• Description: Flash Memory Cmos 16m 2m ? 8/1m ? 16 Bit Dual Operation
• Manufacturer: Meet Spansion Inc.

36
MBM29DL16XTD/BD
• Extended Command
When the erase operation has been suspended, the devices default to the erase-suspend-read mode. Reading
data in this mode is the same as reading from the standard read mode except that the data must be read from
sectors that have not been erase-suspended. Successively reading from the erase-suspended sector while the
device is in the erase-suspend-read mode will cause DQ
After entering the erase-suspend-read mode, the user can program the device by writing the appropriate
command sequence for Program. This program mode is known as the erase-suspend-program mode. Again,
programming in this mode is the same as programming in the regular Program mode except that the data must
be programmed to sectors that are not erase-suspended. Successively reading from the erase-suspended sector
while the devices are in the erase-suspend-program mode will cause DQ
suspended Program operation is detected by the RY/BY output pin, Data polling of DQ
(DQ
while DQ
To resume the operation of Sector Erase, the Resume command (30h) should be written to the bank being erase
suspended. Any further writes of the Resume command at this point will be ignored. Another Erase Suspend
command can be written after the chip has resumed erasing.
(1) Fast Mode
(2) Fast Programming
(3) Extended Sector Group Protection
(4) CFI (Common Flash Memory Interface)
MBM29DL16XTD/BD has Fast Mode function. This mode dispenses with the initial two unclock cycles
required in the standard program command sequence by writing Fast Mode command into the command
register. In this mode, the required bus cycle for programming is two cycles instead of four bus cycles in
standard program command. (Do not write erase command in this mode.) The read operation is also executed
after exiting this mode. To exit this mode, it is necessary to write Fast Mode Reset command into the command
register. The first cycle must contain the bank address. (Refer to “(8) Embedded Program
Fast Mode” in ■FLOW CHART.) The V
During Fast Mode, the programming can be executed with two bus cycles operation. The Embedded Program
Algorithm is executed by writing program set-up command (A0h) and data write cycles (PA/PD). (Refer to
“(8) Embedded Program
In addition to normal sector group protection, the MBM29DL16XTD/BD has Extended Sector Group
Protection as extended function. This function enable to protect sector group by forcing V
and write a command sequence. Unlike conventional procedure, it is not necessary to force V
timing for control pins. The extended sector group protection requires V
condition, the operation is initiated by writing the set-up command (60h) into the command register. Then,
the sector group addresses pins (A
be set to the sector group to be protected (recommend to set V
extended sector group protection command (60h). A sector group is typically protected in 250 μs. To verify
programming of the protection circuitry, the sector group addresses pins (A
A
logical “1” at device output DQ
logical “0”, please repeat to write extended sector group protection command (60h) again. To terminate the
operation, it is necessary to set RESET pin to V
Diagram” in ■TIMING DIAGRAM and “(7) Extended Sector Group Protection Algorithm” in ■FLOW CHART.)
The CFI (Common Flash Memory Interface) specification outlines device and host system software
interrogation handshake which allows specific vendor-specified software algorithms to be used for entire
families of devices. This allows device-independent, JEDEC ID-independent, and forward-and backward-
compatible software support for the specified flash device families. Refer to CFI specification in detail.
The operation is initiated by writing the query command (98h) into the command register. The bank address
should be set when writing this command. Then the device information can be read from the bank, and an
6
) which is the same as the regular Program operation. Note that DQ
12
) and (A
6
can be read from any address within bank being erase-suspended.
6
, A
1
, A
0
) = (0, 1, 0) should be set and write a command (40h). Following the command write, a
TM
Algorithm for Fast Mode” in ■FLOW CHART.)
0
will produce for protected sector in the read operation. If the output data is
Retired Product DS05-20874-8E_July 12, 2007
19
, A
-70/90
CC
18
, A
active current is required even CE = V
17
, A
IH
16
. (Refer to “(17) Extended Sector Group Protection Timing
, A
15
2
, A
to toggle. (See the section on DQ
14
, A
13
and A
IL
for the other addresses pins), and write
7
must be read from the Program address
2
12
to toggle. The end of the erase-
) and (A
ID
on RESET pin only. With this
19
, A
6
18
, A
IH
, A
during Fast Mode.
1
7
, A
17
or by the Toggle Bit I
, A
0
) = (0, 1, 0) should
16
2
.)
, A
ID
TM
on RESET pin
15
Algorithm for
ID
, A
and control
14
, A
13
and