MBM29DL16XTE70PFTN Meet Spansion Inc., MBM29DL16XTE70PFTN Datasheet - Page 33

• Manufacturer Part Number: MBM29DL16XTE70PFTN
• Description: Flash Memory Cmos 16m 2m ? 8/1m ? 16 Bit Dual Operation
• Manufacturer: Meet Spansion Inc.

■ COMMAND DEFINITIONS
• Read/Reset Command
• Autoselect Command
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them in the improper sequence will reset the devices to the
read mode. Some commands are required Bank Address (BA) input. When command sequences are inputed
to bank being read, the commands have priority than reading. “MBM29DL16XTD/BD Command Definitions
Table” in ■DEVICE BUS OPERATION defines the valid register command sequences. Note that the Erase
Suspend (B0h) and Erase Resume (30h) commands are valid only while the Sector Erase operation is in
progress. Also the Program Suspend (B0h) and Program Resume (30h) commands are valid only while the
Program operation is in progress. Moreover both Read/Reset commands are functionally equivalent, resetting
the device to the read mode. Please note that commands are always written at DQ
bits are ignored.
In order to return from Autoselect mode or Exceeded Timing Limits (DQ
Reset operation is initiated by writing the Read/Reset command sequence into the command register.
Microprocessor read cycles retrieve array data from the memory. The devices remain enabled for reads until the
command register contents are altered.
The devices will automatically power-up in the Read/Reset state. In this case, a command sequence is not
required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures
that no spurious alteration of the memory content occurs during the power transition. Refer to the AC Read
Characteristics and Waveforms for the specific timing parameters.
Flash memories are intended for use in applications where the local CPU alters memory contents. As such,
manufacture and device codes must be accessible while the devices reside in the target system. PROM
programmers typically access the signature codes by raising A
voltage onto the address lines is not generally desired system design practice.
The device contains an Autoselect command operation to supplement traditional PROM programming
methodology. The operation is initiated by writing the Autoselect command sequence into the command register.
The Autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write
cycle that contains the bank address (BA) and the Autoselect command. Then the manufacture and device
codes can be read from the bank, and an actual data of memory cell can be read from the another bank.
Following the command write, a read cycle from address (BA)00h retrieves the manufacture code of 04h. A read
cycle from address (BA)01h for ×16((BA)02h for ×8) returns the device code (MBM29DL161TD = 36h and
MBM29DL161BD = 39h for ×8 mode; MBM29DL161TD = 2236h and MBM29DL161BD = 2239h for ×16 mode),
(MBM29DL162TD = 2Dh and MBM29DL162BD = 2Eh for ×8 mode; MBM29DL162TD = 222Dh and
MBM29DL162BD = 222Eh for ×16 mode), (MBM29DL163TD = 28h and MBM29DL163BD = 2Bh for ×8 mode;
MBM29DL163TD = 2228h and MBM29DL163BD = 222Bh for ×16 mode), (MBM29DL164TD = 33h and
MBM29DL164BD = 35h for ×8 mode; MBM29DL164TD = 2233h and MBM29DL164BD = 2235h for ×16 mode).
(See “MBM29DL161TD/BD, MBM29DL162TD/BD, MBM29DL163TD/BD and MBM29DL164TD/BD Sector
Group Protection Verify Autoselect Codes Tables” and these “Extended Autoselect Code Tables” in ■DEVICE
BUS OPERATION.)
All manufacturer and device codes will exhibit odd parity with DQ
or unprotection) will be informed by address (BA)02h for ×16 ((BA)04h for ×8). Scanning the sector group
addresses (A
output DQ
group protection on the protected sector. (See “MBM29DL16XTD/BD User Bus Operations Tables (BYTE = V
and BYTE = V
The manufacture and device codes can be allowed reading from selected bank. To read the manufacture and
device codes and sector group protection status from non-selected bank, it is necessary to write Read/Reset
command sequence into the register and then Autoselect command should be written into the bank to be read.
0
for a protected sector group. The programming verification should be performed by verify sector
19
IL
, A
)” in ■DEVICE BUS OPERATION.)
18
, A
17
, A
16
, A
15
, A
14
, A
Retired Product DS05-20874-8E_July 12, 2007
13
, and A
12
) while (A
MBM29DL16XTD/BD
6
, A
1
, A
7
9
defined as the parity bit. Sector state (protection
to a high voltage. However, multiplexing high
0
) = (0, 1, 0) will produce a logical “1” at device
5
= 1) to Read/Reset mode, the Read/
0
to DQ
7
and DQ
8
to DQ
-70/90
15
IH
33