BUW11F NXP Semiconductors, BUW11F Datasheet - Page 7

• Manufacturer Part Number: BUW11F
• Description: Silicon Diffused Power Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
1997 Aug 14
handbook, halfpage
handbook, halfpage
Silicon diffused power transistors
T
t
r
j
= 125 C.
h FE
20 ns.
I B
I C
10
10
90%
10%
90%
10%
Fig.9
2
1
Fig.7 DC current gain; typical values.
10
2
Switching time waveforms with
resistive load.
t r 30 ns
10
V CE = 5 V
t on
1
1V
1
t s
I B on
10
t f
I C (A)
I C on
I B off
MBB731
MBC095
t
t
10
2
7
andbook, halfpage
handbook, halfpage
V
The values of R
I
V
L
Bon
C
CC
CL
= 200 H.
Fig.10 Test circuit inductive load and reverse
requirements.
= up to 1000 V; V
= 250 V; t
V BE
I B
V IM
0
Fig.8 Test circuit resistive load.
bias SOAR.
p
= 20 s; V
B
t p
and R
T
CC
L
= 30 V; V
are selected in accordance with I
IM
L B
BUW11F; BUW11AF
= 6 to +8 V; t
BE
L C
R B
V CC
= 1 V to 5 V; L
D.U.T.
R L
p
/T = 0.01.
Product specification
V CC
D.U.T.
MGE244
B
MGE246
V CL
= 1 H;
Con
and