BUW11F NXP Semiconductors, BUW11F Datasheet - Page 4

• Manufacturer Part Number: BUW11F
• Description: Silicon Diffused Power Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
Note
1. Measured with a half-sinewave voltage (curve tracer).
1997 Aug 14
V
V
V
I
I
I
h
Switching times resistive load (Figs 8 and 9)
t
t
t
Switching times inductive load (Figs 10 and 11)
t
t
SYMBOL
j
Csat
CES
EBO
on
s
f
s
f
FE
CEOsust
CEsat
BEsat
= 25 C unless otherwise specified.
Silicon diffused power transistors
collector-emitter sustaining voltage
collector-emitter saturation voltage
base-emitter saturation voltage
collector saturation current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
turn-on time
storage time
fall time
storage time
fall time
BUW11F
BUW11AF
BUW11F
BUW11AF
BUW11F
BUW11AF
BUW11F
BUW11AF
BUW11F
BUW11AF
BUW11F
BUW11AF
BUW11F
BUW11AF
BUW11F
BUW11AF
BUW11F
BUW11AF
PARAMETER
I
see Figs 5 and 6
I
I
I
I
V
V
V
T
V
V
V
I
I
I
I
I
I
I
V
I
V
I
V
I
V
C
C
C
C
C
Con
Con
Con
Con
Con
Con
Con
Con
Con
Con
CE
CE
CE
j
EB
CE
CE
CL
CL
CL
CL
= 125 C; note 1
= 100 mA; I
= 3 A; I
= 2.5 A; I
= 3 A; I
= 2.5 A; I
= 250 V; T
= 300 V; T
= 250 V; T
= 300 V; T
= 9 V; I
= 3 A; I
= 2.5 A; I
= 3 A; I
= 2.5 A; I
= 3 A; I
= 2.5 A; I
= 3 A; I
= 2.5 A; I
= 3 A; I
= 2.5 A; I
= 1.5 V
= V
= V
= 5 V; I
= 5 V; I
CESMmax
CESMmax
4
B
B
CONDITIONS
= 600 mA
= 600 mA
C
B
B
C
C
Bon
Bon
Bon
B
B
= 500 mA
= 500 mA
= 600 mA;
= 600 mA;
= 0
= 5 mA; see Fig.7
= 0.5 A; see Fig.7
Bon
Bon
Bon
B
B
Boff
c
c
c
c
= I
= I
= I
= 500 mA;
= 500 mA;
; V
; V
= 100 C
= 100 C
= 100 C
= 100 C
= I
= I
= I
= 0; L = 25 mH;
BE
BE
Boff
Boff
Boff
Boff
Boff
Boff
= 0; note 1
= 0;
= 600 mA
= 600 mA
= 600 mA
= 500 mA
= 500 mA
= 500 mA
BUW11F; BUW11AF
400
450
10
10
MIN.
18
20
2
2
200
200
TYP.
Product specification
1.5
1.5
1.4
1.4
3
2.5
1
2
10
35
35
1
1
4
4
0.8
0.8
2.5
2.5
300
300
MAX.
V
V
V
V
V
V
A
A
mA
mA
mA
ns
ns
UNIT
s
s
s
s
s
s
s
s