BUW11F NXP Semiconductors, BUW11F Datasheet - Page 3

• Manufacturer Part Number: BUW11F
• Description: Silicon Diffused Power Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Mounted without heatsink compound and 30 5 N force on centre of package.
2. Mounted with heatsink compound and 30 5 N force on centre of package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Mounted without heatsink compound and 30 5 N force on centre of package.
2. Mounted with heatsink compound and 30 5 N force on centre of package.
ISOLATION CHARACTERISTICS
1997 Aug 14
R
R
V
V
I
I
I
I
I
P
T
T
V
C
SYMBOL
SYMBOL
SYMBOL
Csat
C
CM
B
BM
stg
j
CESM
CEO
tot
isolM
th j-h
th j-a
isol
Silicon diffused power transistors
thermal resistance from junction to external heatsink note 1
thermal resistance from junction to ambient
collector-emitter peak voltage
collector-emitter voltage
collector saturation current
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
isolation voltage from all terminals to external heatsink (peak value)
isolation capacitance from collector to external heatsink
BUW11F
BUW11AF
BUW11F
BUW11AF
BUW11F
BUW11AF
PARAMETER
PARAMETER
PARAMETER
T
V
open base
see Figs 2 and 4
t
t
T
p
p
h
h
BE
< 20 ms; see Fig.2
< 20 ms
= 0
25 C; see Fig.3; note 1
25 C; see Fig.3; note 2
3
CONDITIONS
note 2
CONDITIONS
BUW11F; BUW11AF
65
MIN.
TYP.
VALUE
3.95
3.05
35
Product specification
850
1000
400
450
3
2.5
5
10
2
4
32
41
+150
150
1500
21
MAX.
MAX.
UNIT
K/W
K/W
K/W
V
V
V
V
A
A
A
A
A
A
W
W
V
pF
C
C
UNIT
UNIT