BUW11F NXP Semiconductors, BUW11F Datasheet - Page 2

• Manufacturer Part Number: BUW11F
• Description: Silicon Diffused Power Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
DESCRIPTION
High-voltage, high-speed,
glass-passivated NPN power
transistor in a SOT199 package.
APPLICATIONS
PINNING
QUICK REFERENCE DATA
1997 Aug 14
V
V
V
I
I
I
P
t
SYMBOL
Csat
C
CM
f
Converters
Inverters
Switching regulators
Motor control systems.
CESM
CEO
CEsat
tot
Silicon diffused power transistors
PIN
mb
1
2
3
base
collector
emitter
mounting base;
electrically isolated
collector-emitter peak voltage
collector-emitter voltage
collector-emitter saturation voltage
collector saturation current
collector current (DC)
collector current (peak value)
total power dissipation
fall time
BUW11F
BUW11AF
BUW11F
BUW11AF
BUW11F
BUW11AF
DESCRIPTION
PARAMETER
ook, halfpage
Front view
1
Fig.1 Simplified outline (SOT199) and symbol.
V
open base
see Figs 2 and 4
t
T
resistive load; see Figs 8 and 9
2
p
h
BE
< 20 ms; see Fig.2
2
= 0
25 C; see Fig.3
MSB012
3
CONDITIONS
handbook, halfpage
BUW11F; BUW11AF
850
1000
400
450
1.5
3
2.5
5
10
32
0.8
MBB008
Product specification
MAX.
1
2
3
V
V
V
V
V
A
A
A
A
W
s
UNIT