KSE13007F Fairchild Semiconductor, KSE13007F Datasheet

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KSE13007F

Manufacturer Part Number
KSE13007F
Description
Npn Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet

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©2002 Fairchild Semiconductor Corporation
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
NPN Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW 300 s, Duty Cycle 2%
V
V
V
I
I
I
P
T
T
BV
I
h
V
V
C
f
t
t
t
C
CP
B
EBO
T
ON
STG
F
FE
J
STG
CBO
EBO
C
CE
BE
Symbol
ob
CEO
Symbol
CEO
(sat)
(sat)
Collector- Base Voltage
Collector- Emitter Voltage
Emitter- Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Collector-Base Breakdown Voltage
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Parameter
C
T
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
KSE13007F
I
V
V
V
I
I
I
I
I
V
V
V
I
R
C
C
C
C
C
C
B1
EB
CE
CE
CB
CE
CC
L
= 10mA, I
= 2A, I
= 5A, I
= 8A, I
= 2A, I
= 5A, I
= 50
= - I
Test Condition
= 9V, I
= 5V, I
= 5V, I
= 10V , f = 0.1MHz
= 10V, I
=125V, I
B2
B
B
B
B
B
= 1A
C
= 0.4A
= 1A
= 2A
= 0.4A
= 1A
C
C
B
C
= 0
= 2A
= 5A
C
= 0
= 0.5A
= 5A
1
1.Base
Min.
400
8
5
4
- 65 ~ 150
2.Collector
Value
700
400
150
16
40
9
4
8
TO-220F
Typ.
110
Max.
3.Emitter
1.2
1.6
1.6
0.7
60
30
1
1
2
3
3
Rev. A2, June 2002
Units
W
Units
V
V
V
A
A
A
MHz
C
C
mA
pF
V
V
V
V
V
V
s
s
s

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KSE13007F Summary of contents

Page 1

... Output Capacitance ob f Current Gain Bandwidth Product T t Turn On Time ON t Storage Time STG t Fall Time F * Pulse Test: PW 300 s, Duty Cycle 2% ©2002 Fairchild Semiconductor Corporation KSE13007F T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 10mA ...

Page 2

... V [V], COLLECTOR-BASE VOLTAGE CB Figure 3. Collector Output Capacitance 10000 t STG 1000 100 0 [A], COLLECTOR CURRENT C Figure 5. Turn Off Time ©2002 Fairchild Semiconductor Corporation 0.1 0.01 0.1 10 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 100 V =125V ...

Page 3

... Typical Characteristics 100 C], CASE TEMPERATURE C Figure 7. Power Derating ©2002 Fairchild Semiconductor Corporation (Continued) 125 150 175 Rev. A2, June 2002 ...

Page 4

... Package Demensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2002 Fairchild Semiconductor Corporation TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A2, June 2002 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ ...

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