KSE13007F Fairchild Semiconductor, KSE13007F Datasheet
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Manufacturer Part Number
KSE13007F
Description
Npn Silicon Transistor
Manufacturer
Fairchild Semiconductor
Available stocks
Part Number:
KSE13007F H1SMTU
Manufacturer:
FAIRCHILD/仙童
Part Number:
KSE13007F H2SMTU
Part Number:
KSE13007F H2SMTU
Part Number:
KSE13007F H2SMTU
Manufacturer:
FAIRCHILD/仙童
©2002 Fairchild Semiconductor Corporation
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
NPN Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse Test: PW 300 s, Duty Cycle 2%
V
V
V
I
I
I
P
T
T
BV
I
h
V
V
C
f
t
t
t
C
CP
B
EBO
T
ON
STG
F
FE
J
STG
CBO
EBO
C
CE
BE
Symbol
ob
CEO
Symbol
CEO
(sat)
(sat)
Collector- Base Voltage
Collector- Emitter Voltage
Emitter- Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Collector-Base Breakdown Voltage
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Parameter
C
T
=25 C)
C
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
KSE13007F
I
V
V
V
I
I
I
I
I
V
V
V
I
R
C
C
C
C
C
C
B1
EB
CE
CE
CB
CE
CC
L
= 10mA, I
= 2A, I
= 5A, I
= 8A, I
= 2A, I
= 5A, I
= 50
= - I
Test Condition
= 9V, I
= 5V, I
= 5V, I
= 10V , f = 0.1MHz
= 10V, I
=125V, I
B2
B
B
B
B
B
= 1A
C
= 0.4A
= 1A
= 2A
= 0.4A
= 1A
C
C
B
C
= 0
= 2A
= 5A
C
= 0
= 0.5A
= 5A
1
1.Base
Min.
400
8
5
4
- 65 ~ 150
2.Collector
Value
700
400
150
16
40
9
4
8
TO-220F
Typ.
110
Max.
3.Emitter
1.2
1.6
1.6
0.7
60
30
1
1
2
3
3
Rev. A2, June 2002
Units
W
Units
V
V
V
A
A
A
MHz
C
C
mA
pF
V
V
V
V
V
V
s
s
s
Related parts for KSE13007F
KSE13007F Summary of contents
... Output Capacitance ob f Current Gain Bandwidth Product T t Turn On Time ON t Storage Time STG t Fall Time F * Pulse Test: PW 300 s, Duty Cycle 2% ©2002 Fairchild Semiconductor Corporation KSE13007F T =25 C unless otherwise noted C Parameter = =25 C unless otherwise noted C Test Condition I = 10mA ...
... V [V], COLLECTOR-BASE VOLTAGE CB Figure 3. Collector Output Capacitance 10000 t STG 1000 100 0 [A], COLLECTOR CURRENT C Figure 5. Turn Off Time ©2002 Fairchild Semiconductor Corporation 0.1 0.01 0.1 10 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 100 V =125V ...
... Typical Characteristics 100 C], CASE TEMPERATURE C Figure 7. Power Derating ©2002 Fairchild Semiconductor Corporation (Continued) 125 150 175 Rev. A2, June 2002 ...
... Package Demensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2002 Fairchild Semiconductor Corporation TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A2, June 2002 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ ...
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