KSE13004 Fairchild Semiconductor, KSE13004 Datasheet

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KSE13004

Manufacturer Part Number
KSE13004
Description
Npn Silicon Transistor High Voltage Switch Mode Application
Manufacturer
Fairchild Semiconductor
Datasheet
©2001 Fairchild Semiconductor Corporation
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
NPN Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
* Pulse test: PW 300 s, Duty cycle 2% Pulse
I
V
V
V
I
I
P
T
T
BV
I
h
V
V
C
f
t
t
t
CP
C
B
EBO
T
ON
STG
F
FE
J
STG
CBO
CEO
EBO
C
CE
BE
Symbol
Symbol
ob
CEO
(sat)
(sat)
(sus)
Collector-Emitter Sustaining Voltage
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
Parameter
C
: KSE13004
: KSE13005
T
=25 C)
C
KSE13004/13005
=25 C unless otherwise noted
Parameter
T
C
=25 C unless otherwise noted
: KSE13004
: KSE13005
: KSE13004
: KSE13005
I
V
V
V
I
I
I
I
I
V
V
V
I
R
C
C
C
C
C
C
B1
EB
CE
CE
CB
CE
CC
L
= 10mA, I
= 1A, I
= 2A, I
= 4A, I
= 1A, I
= 2A, I
= 62.5
= - I
Test Condition
= 9V, I
= 5V, I
= 5V, I
= 10V, f = 0.1MHz
= 10V, I
= 125V, I
B2
B
B
B
B
B
= 0.4A
C
= 0.2A
= 0.5A
= 1A
= 0.2A
= 0.5A
C
C
B
C
= 0
= 1A
= 2A
C
= 0
= 0.5A
= 2A
1.Base
1
Min.
300
400
10
8
4
- 65 ~ 150
2.Collector
Value
600
700
300
400
150
75
8
2
9
4
Typ.
65
TO-220
Max.
3.Emitter
0.5
0.6
1.2
1.6
0.8
0.9
60
40
1
1
4
Rev. A1, January 2001
Units
W
Units
V
V
V
V
V
A
A
A
MHz
C
C
mA
pF
V
V
V
V
V
V
V
s
s
s

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KSE13004 Summary of contents

Page 1

... Fall Time F * Pulse test: PW 300 s, Duty cycle 2% Pulse ©2001 Fairchild Semiconductor Corporation KSE13004/13005 T =25 C unless otherwise noted C Parameter : KSE13004 : KSE13005 : KSE13004 : KSE13005 = =25 C unless otherwise noted C Test Condition : KSE13004 I = 10mA KSE13005 5V, I ...

Page 2

... Figure 1. DC current Gain 1000 100 [V], COLLECTOR-BASE VOLTAGE CB Figure 3. Collector Output Capacitance 10 t STG 0.1 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 5. Turn Off Time ©2001 Fairchild Semiconductor Corporation 0.1 0.01 0. Figure 2. Base-Emitter Saturation Voltage 10 1 0.1 0.01 0.01 100 1000 10 V =125V CC I =5I ...

Page 3

... Typical Characteristics 100 100 o Tc[ C], CASE TEMPERATURE Figure 7. Power Derating ©2001 Fairchild Semiconductor Corporation (Continued) 125 150 175 Rev. A1, January 2001 ...

Page 4

... Package Demensions 1.27 2.54TYP [2.54 ©2001 Fairchild Semiconductor Corporation TO-220 9.90 0.20 (8.70) ø3.60 0.10 1.52 0.10 0.10 0.80 0.10 2.54TYP ] [2.54 ] 0.20 0.20 10.00 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A1, January 2001 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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