FJD3076TF-NL Fairchild Semiconductor, FJD3076TF-NL Datasheet - Page 2

• Manufacturer Part Number: FJD3076TF-NL
• Description: Fjd3076 Npn Epitaxial Silicon Transistor
• Manufacturer: Fairchild Semiconductor

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 3. Base-Emitter Saturation Voltage
1000
0.01
100
0.1
2.0
1.6
1.2
0.8
0.4
0.0
10
10
1
1
1E-3
0.0
Collector-Emitter Saturation Voltage
0
Figure 5. Base-Emitter On Voltage
Figure 1. Static Characteristic
0.2
V
0.4
V
CE
I
BE
B
I
I
B
B
I
I
[V], COLLECTOR-EMITTER VOLTAGE
0.01
B
= 18mA
(mV), BASE-EMITTER VOLTAGE
B
I
= 20mA
= 16mA
I
C
B
= 14mA
V
= 12mA
10
V
[A], COLLECTOR CURRENT
= 10mA
CE
0.6
BE
(sat)
(sat)
I
B
0.8
= 8mA
I
B
= 6mA
1.0
0.1
I
B
20
= 4mA
1.2
1.4
1
1.6
V
I
C
CE
= 10 I
I
B
30
= 3V
= 2mA
1.8
B
2.0
10
1000
1000
100
100
0.01
10
10
0.1
Figure 4. Collector Output Capacitance
10
1E-3
1
1
1
*SINGLE NONREPETITIVE
I
C
PULSE T
I
C
(DC) MAX.
(Pulse) MAX.
Figure 6. Safe Operating Area
Figure 2. DC Current Gain
V
V
CE
C
=25[
CB
[V], COLLECTOR-EMITTER VOLTAGE
0.01
[V], COLLECTOR-BASE VOLTAGE
I
C
o
C]
[A], COLLECTOR CURRENT
0.1
10
10
V
CE
= 1V
1
I
f=1MHz
E
V
=0
CE
Rev. C1, December 2001
= 3V
100
10
100