PHB78NQ03LT NXP Semiconductors, PHB78NQ03LT Datasheet - Page 8

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PHB78NQ03LT

Manufacturer Part Number
PHB78NQ03LT
Description
N-channel Enhancement Mode Field-effect Transistor
Manufacturer
NXP Semiconductors
Datasheet

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Product data sheet
Fig 13. Source (diode forward) current as a function of
(A)
I
S
80
60
40
20
0
T
source-drain (diode forward) voltage; typical
values
0
j
= 25 C and 175 C; V
0.4
175 C
GS
= 0 V
0.8
T
V
j
= 25 C
SD
003aaa764
(V)
1.2
Rev. 05 — 13 June 2005
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
V
as a function of drain-source voltage; typical
values
GS
-1
= 0 V; f = 1 MHz
N-channel TrenchMOS logic level FET
1
PHB78NQ03LT
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
10
V
DS
003aaa765
C
C
C
(V)
rss
iss
oss
10
2
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