PHB78NQ03LT NXP Semiconductors, PHB78NQ03LT Datasheet - Page 3

• Manufacturer Part Number: PHB78NQ03LT
• Description: N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 15071
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
I
D
P
(%)
120
10
10
der
10
80
40
0
3
2
1
10
function of mounting base temperature
T
P
0
mb
der
-1
= 25 C; I
=
---------------------- -
P
tot 25 C
50
P
tot
DM
is single pulse; V
100%
100
Limit R
150
GS
= 10 V
T
03aa16
mb
DSon
1
( C)
= V
200
DS
Rev. 05 — 13 June 2005
/ I
D
Fig 2. Normalized continuous drain current as a
DC
(%)
I
der
120
80
40
0
function of mounting base temperature
I
0
der
=
10
-------------------
I
N-channel TrenchMOS logic level FET
D 25 C
I
50
D
100%
PHB78NQ03LT
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
100
10 ms
100 s
1 ms
t
V
p
DS
=
10 µs
(V)
150
T
003aaa756
003aaa757
mb
( C)
200
10
2
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