PHB78NQ03LT NXP Semiconductors, PHB78NQ03LT Datasheet - Page 2

• Manufacturer Part Number: PHB78NQ03LT
• Description: N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 15071
Product data sheet
Type number
PHB78NQ03LT
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current
peak source (diode forward) current T
non-repetitive drain-source
avalanche energy
Ordering information
Limiting values
Package
Name
D2PAK
Description
plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT404
Conditions
25 C
25 C
T
T
T
T
T
T
T
unclamped inductive load; I
t
V
p
mb
mb
mb
mb
mb
mb
mb
mb
GS
= 0.17 ms; V
Rev. 05 — 13 June 2005
= 25 C; V
= 100 C; V
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 10 V; starting at T
T
T
j
j
175 C
175 C; R
Figure 1
GS
GS
DD
GS
GS
= 5 V
= 10 V;
= 5 V
= 10 V;
25 V; R
p
p
GS
j
= 20 k
10 s;
10 s
= 25 C
Figure 2
Figure 2
D
GS
= 32 A;
= 50 ;
N-channel TrenchMOS logic level FET
Figure 3
and
3
PHB78NQ03LT
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Min
-
-
-
-
-
-
-
-
-
-
-
-
55
55
Max
25
25
40
40
40
40
160
107
+175
+175
40
160
100
20
Version
2 of 12
Unit
V
V
V
A
A
A
A
A
W
A
A
mJ
C
C