PHB78NQ03LT NXP Semiconductors, PHB78NQ03LT Datasheet - Page 4

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PHB78NQ03LT

Manufacturer Part Number
PHB78NQ03LT
Description
N-channel Enhancement Mode Field-effect Transistor
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
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Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 15071
Product data sheet
Symbol Parameter
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
1
10
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
-5
0.05
0.02
0.2
0.1
Thermal characteristics
0.5
single pulse
10
-4
10
Rev. 05 — 13 June 2005
-3
Conditions
Figure 4
mounted on a printed-circuit
board; minimum footprint;
vertical in still air
10
-2
N-channel TrenchMOS logic level FET
PHB78NQ03LT
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
10
-1
P
Min
-
-
t
p
t
p
T
(s)
Typ
-
50
003aaa759
=
T
t
p
t
Max
1.4
-
1
4 of 12
Unit
K/W
K/W

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