NDP5060L Fairchild Semiconductor, NDP5060L Datasheet - Page 5

• Manufacturer Part Number: NDP5060L
• Description: N-channel Logic Level Enhancement Mode Field Effect Transistor
• Manufacturer: Fairchild Semiconductor

Typical Electrical Characteristics
V
Figure 11. Switching Test Circuit
Figure 9. Capacitance Characteristics
Figure 7. Breakdown Voltage Variation with
GEN
1500
1000
1.15
1.05
0.95
500
200
100
1.1
0.9
50
1
-50
1
Temperature
I
D
R
-25
= 250µA
f = 1 MHz
V
GEN
GS
R
2
= 0V
GS
0
V
V
T
DS
3
J
.
IN
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
25
G
5
50
D
S
V
75
DD
.
10
R
100
L
.
DUT
(continued)
125
20
C oss
C iss
C rss
150
V
30
O U T
175
50
V
t
V
O U T
d(on)
0.0001
Figure 10. Gate Charge Characteristics
10
IN
Figure 12. Switching Waveforms
0.001
8
6
4
2
0
0.01
0
1 0 %
0.1
20
10
5
1
Figure 8. Body Diode Forward Voltage
I
0
D
= 26A
V
GS
Variation with Current and Temperature
t
5 0 %
o n
= 0V
0.2
1 0 %
10
V
SD
T = 125°C
t
9 0 %
PULSE WIDTH
J
r
, BODY DIODE FORWARD VOLTAGE (V)
Q
0.4
g
, GATE CHARGE (nC)
t
d(off)
20
0.6
25°C
V
DS
5 0 %
= 12V
-55°C
.
0.8
9 0 %
t
1 0 %
o f f
30
48V
9 0 %
.
1
INVERTED
24V
NDP5060L Rev.A
t
f
.
1.2
40