NDH8521C Fairchild Semiconductor, NDH8521C Datasheet

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NDH8521C

Manufacturer Part Number
NDH8521C
Description
Dual N & P-channel Enhancement Mode Field Effect Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
Absolute Maximum Ratings
________________________________________________________________________________
Symbol
V
V
I
P
T
THERMAL CHARACTERISTICS
R
R
© 1997 Fairchild Semiconductor Corporation
D
General Description
These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
DSS
GSS
D
J
NDH8521C
Dual N & P-Channel Enhancement Mode Field Effect Transistor
,T
JA
JC
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Power Dissipation for Single Operation
Operating and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
- Pulsed
T
A
= 25°C unless otherwise noted
and other battery
(Note 1)
(Note 1)
(Note 1)
(Note 1)
Features
N-Ch 3.8 A, 30 V, R
Proprietary SuperSOT
frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
Exceptional on-resistance and maximum DC current
capability.
P-Ch -2.7 A, -30 V,R
N-Channel
10.5
±20
3.8
30
5
6
7
8
-55 to 150
R
R
156
DS(ON)
0.8
DS(ON)
40
DS(ON)
DS(ON)
TM
-8 package design using copper lead
=0.033
=0.05
=0.07
=0.115
P-Channel
±20
-2.7
@ V
-30
@ V
@ V
-8
@ V
GS
GS
GS
GS
=4.5 V
=10 V
=-10 V
1
2
4
3
DS(ON)
=-4.5 V.
.
May 1997
NDH8521C Rev.C
Units
°C/W
°C/W
°C
W
V
V
A

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NDH8521C Summary of contents

Page 1

... A N-Channel 30 ±20 3.8 (Note 1) 10.5 (Note 1) (Note 1) (Note 1) May 1997 =0.033 @ V =10 V DS(ON =0. =4.5 V DS(ON) GS =0. =-10 V DS(ON =0.115 @ V =-4.5 V. DS(ON package design using copper lead . DS(ON P-Channel -30 ±20 -2.7 -8 0.8 -55 to 150 156 40 Units °C °C/W °C/W NDH8521C Rev.C ...

Page 2

... 1.0 MHz Type Min Typ Max Units N- P-Ch -30 V N-Ch 1 µA 10 µA P-Ch -1 µA -10 µA All 100 nA All -100 nA N- 0.8 1.04 1.6 P-Ch -1 -1.6 -2 -0.8 -1.2 -1.6 N-Ch 0.027 0.033 0.04 0.063 0.041 0.05 P-Ch 0.062 0.07 0.088 0.125 0.102 0.115 N- P-Ch 5.5 N-Ch 500 pF P-Ch 560 N-Ch 310 pF P-Ch 340 N-Ch 125 pF P-Ch 130 NDH8521C Rev.C ...

Page 3

... FR-4 PCB in a still air environment 156 C/W when mounted on a 0.0025 in Type Min Typ Max Units N-Ch 1.8 P-Ch 3.8 N-Ch 4.2 P-Ch 4.7 N-Ch 0.67 P-Ch -0.67 N-Ch 0.72 1.2 P-Ch -0.74 -1.2 is guaranteed pad of 2oz copper. NDH8521C Rev ...

Page 4

... DRAIN CURRENT (A) D Gate Voltage and Drain Current. = 10V T = 125°C J 25°C -55° DRAIN CURRENT (A) D Variation with Drain Current 250µ 100 T , JUNCTION TEMPERATURE (° 125 150 NDH8521C Rev.C ...

Page 5

... Figure 10. N-Channel Gate Charge Characteristics -55°C J 25°C 125° 125°C J 25°C -55° 0 BODY DIODE FORWARD VOLTAGE ( 10V DS 20V GATE CHARGE (nC) g NDH8521C Rev 15V 2 0 ...

Page 6

... Gate Voltage and Drain Current. = -10V T = 125°C J 25°C -55° DRAIN CURRENT (A) D Drain Current and Temperature -250µ JUNCTION TEMPERATURE (°C) J with Temperature. -10 -10 - NDH8521C Rev.C ...

Page 7

... Figure 21. P-Channel Gate Charge Characteristics -55°C J 25°C 125°C -12 - 125°C J 25°C -55°C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Voltage Variation with Current and . Temperature V =-5V DS -10V -15V GATE CHARGE (nC NDH8521C Rev.C ...

Page 8

... See Note P(pk) P(pk (t) ( Duty Cycle Duty Cycle off t t d(off) r 90% 90% 10% 10% 90% 50% 50% PULSE WIDTH NDH8521C Rev.C ...

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